Research output per year
Research output per year
Personal profile
In Korean
김대현 교수(IT대학 전자공학부)
Education
(1997) BS. D., Kyungpook National University
(2000) M.A., Seoul National University
(2004) Ph.D., Seoul National University
(2000) M.A., Seoul National University
(2004) Ph.D., Seoul National University
Professional Experience
(2015 ~ present) Professor, Kyungpook National University
(2012 ~ 2014) Manager, SEMATECH
(2008 ~2012) Member of Technical Staff, Teledyne Scientific Company
(2005 ~ 2008) Post-Doc and Research Scientist, Microsystems Technology Laboratories (MTL) Massachusetts Institute of Technology
(Advisor: Prof. Jesus A. del Alamo)
(2004 ~ 2005) Post-Doc. Associate, Millimeter-wave Device and Circuit Laboratories (MDCL) Seoul National University
(2012 ~ 2014) Manager, SEMATECH
(2008 ~2012) Member of Technical Staff, Teledyne Scientific Company
(2005 ~ 2008) Post-Doc and Research Scientist, Microsystems Technology Laboratories (MTL) Massachusetts Institute of Technology
(Advisor: Prof. Jesus A. del Alamo)
(2004 ~ 2005) Post-Doc. Associate, Millimeter-wave Device and Circuit Laboratories (MDCL) Seoul National University
Research Interests
CMOS extension, THz and 6G mobile Application, Device modeling, Monolithic mmWave IC(MMIC)
Major Research Achievements
o Terahertz In0.8Ga0.2As quantum-well HEMTs toward 6G applications
o On the universality of drain-induced-barrier-lowering in field-effect transistors
o Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets
o On the universality of drain-induced-barrier-lowering in field-effect transistors
o Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets
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Collaborations and top research areas from the last five years
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
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Ballistic transport in state-of-the art In0.65Ga0.35As/In0.52Al0.48As quantum-well high-electron-mobility transistors at room and cryogenic temperatures
Son, S. W., Lee, I. G., Yu, M. S., Choi, S. M., Jeon, Y. S., Son, S. P., Yoo, J. H., Yun, S. K., Kim, T. W., Lee, J. H., Yang, K. & Kim, D. H., 2024, 2024 IEEE International Electron Devices Meeting, IEDM 2024. Institute of Electrical and Electronics Engineers Inc., (Technical Digest - International Electron Devices Meeting, IEDM).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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Characterization of AlGaN/GaN HEMTs on 4-inch SiC substrate at Cryogenic temperature
Park, W. S., Lee, H. J., Kim, H. J., Lee, J. H., Yang, K. & Kim, D. H., 2024.Research output: Contribution to conference › Paper › peer-review
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Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN high-electron-mobility transistors for X-band applications
Chang, S. J., Jeong, H. S., Jung, H. W., Choi, S. M., Choi, I. G., Noh, Y. S., Kim, S. I., Lee, S. H., Ahn, H. K., Kang, D. M., Kim, D. H. & Lim, J. W., Dec 2024, In: ETRI Journal. 46, 6, p. 1090-1102 13 p.Research output: Contribution to journal › Article › peer-review
Open Access4 Scopus citations -
High-performance uniform stepper-based InP double-heterojunction bipolar transistor (DHBT) on a 3-inch InP substrate
Heon Shin, S., Jeong, H. S., Kim, Y. H., Jeon, Y. S., Beak, J. M., Park, W. S., Lee, I. G., Yun, J., Kim, T., Lee, J. H., Kwon, H. M. & Kim, D. H., Jul 2024, In: Solid-State Electronics. 217, 108933.Research output: Contribution to journal › Article › peer-review
1 Scopus citations -
Improved frequency performance in AlGaN/GaN HEMTs on Si using hydrogen silsesquioxane-assisted gate
Jung, H. W., Choi, I. G., Kim, D. H., Jung, H. S., Choi, S. M., Chang, S. J., Ahn, H. K., Lim, J. W., Kang, D. M., Kim, D. H. & Won, S. M., Feb 2024, In: Materials Science in Semiconductor Processing. 170, 107985.Research output: Contribution to journal › Article › peer-review
3 Scopus citations