Daehyun Kim

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Daehyun Kim

Professor

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1998 …2024

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  • 2022

    On the universality of drain-induced-barrier-lowering in field-effect transistors

    Choi, S. M., Jo, H. B., Yun, D. Y., Kim, J. G., Park, W. S., Baek, J. M., Lee, I. G., Shin, J. K., Kwon, H. M., Tsutsumi, T., Sugiyama, H., Matsuzaki, H., Lee, J. H. & Kim, D. H., 2022, 2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., p. 831-834 4 p. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2022-December).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    1 Scopus citations

  • Terahertz In0.8Ga0.2As quantum-well HEMTs toward 6G applications

    Park, W. S., Jo, H. B., Kim, H. J., Choi, S. M., Yoo, J. H., Kim, J. H., Jeong, H. S., George, S., Beak, J. M., Lee, I. G., Kim, T. W., Kim, S. K., Yun, J., Kim, T., Tsutsumi, T., Sugiyama, H., Matsuzaki, H., Lee, J. H. & Kim, D. H., 2022, 2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., p. 1141-1144 4 p. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2022-December).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    7 Scopus citations
  • 2021

    InxGa1-xAs quantum-well high-electron-mobility transistors with a record combination of fT and fmax: From the mobility relevant to ballistic transport regimes

    Yun, S. W., Jo, H. B., Yoo, J. H., Park, W. S., Jeong, H. S., Choi, S. M., Kim, H. J., George, S., Beak, J. M., Lee, I. G., Kim, T. W., Kim, S. K., Yun, J., Kim, T., Tsutsumi, T., Sugiyama, H., Matsuzaki, H. & Kim, D. H., 2021, 2021 IEEE International Electron Devices Meeting, IEDM 2021. Institute of Electrical and Electronics Engineers Inc., p. 11.3.1-11.3.4 (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2021-December).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    2 Scopus citations
  • 2020

    Lg= 19 nm In0.8Ga0.2As composite-channel HEMTs with fT= 738 GHz and fmax= 492 GHz

    Jo, H. B., Yun, S. W., Kim, J. G., Yun, D. Y., Lee, I. G., Kim, D. H., Kim, T. W., Kim, S. K., Yun, J., Kim, T., Tsutsumi, T., Sugiyama, H. & Matsuzaki, H., 12 Dec 2020, 2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc., p. 8.4.1-8.4.4 9372070. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2020-December).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    22 Scopus citations
  • 2016

    Low-temperature characteristics of In0.7Ga0.3As PHEMTs

    Son, S. W., Park, J. H., Baek, J. M., Kim, J. S., Kim, D. K. & Kim, D. H., 27 Sep 2016, Proceedings of the 25th Biennial Lester Eastman Conference on High Performance Devices, LEC 2016. Institute of Electrical and Electronics Engineers Inc., p. 12-14 3 p. 7578922. (Proceedings of the 25th Biennial Lester Eastman Conference on High Performance Devices, LEC 2016).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    1 Scopus citations
  • 2012

    E-mode planar Lg = 35 nm In0.7Ga0.3As MOSFETs with InP/Al2O3/HfO2 (EOT = 0.8 nm) composite insulator

    Kim, D. H., Hundal, P., Papavasiliou, A., Chen, P., King, C., Paniagua, J., Urteaga, M., Brar, B., Kim, Y. G., Kuo, J. M., Li, J., Pinsukanjana, P. & Kao, Y. C., 2012, 2012 IEEE International Electron Devices Meeting, IEDM 2012. p. 32.2.1-32.2.4 6479150. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    3 Scopus citations
  • 2011

    f T = 688 GHz and f max = 800 GHz in L g = 40 nm In 0.7Ga 0.3As MHEMTs with g m-max > 2.7 mS/μm

    Kim, D. H., Brar, B. & Del Alamo, J. A., 2011, 2011 International Electron Devices Meeting, IEDM 2011. p. 13.6.1-13.6.4 6131548. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    48 Scopus citations

  • III-V CMOS: What have we learned from HEMTs?

    Del Alamo, J. A., Kim, D. H., Kim, T. W., Jin, D. & Antoniadis, D. A., 2011, 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011. 5978379. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    2 Scopus citations

  • Wideband Low-Noise-Amplifier (LNA) with Lg = 50 nm InGaAs pHEMT and wideband RF chokes

    Chen, P. S., Kim, D. H., Bergman, J., Hacker, J. & Brar, B., 2011, 2011 IEEE MTT-S International Microwave Symposium, IMS 2011. 5972958. (IEEE MTT-S International Microwave Symposium Digest).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    9 Scopus citations
  • 2010

    50-nm E-mode in0.7Ga0.3As PHEMTs on 100-mm InP substrate with fmax > 1 THz

    Kim, D. H., Del Alamo, J. A., Chen, P., Ha, W., Urteaga, M. & Brar, B., 2010, 2010 IEEE International Electron Devices Meeting, IEDM 2010. p. 30.6.1-30.6.4 5703453. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    26 Scopus citations

  • 60 nm self-aligned-gate InGaAs HEMTs with record high-frequency characteristics

    Kim, T. W., Kim, D. H. & Del Alamo, J. A., 2010, 2010 IEEE International Electron Devices Meeting, IEDM 2010. p. 30.7.1-30.7.4 5703454. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    Open Access
    22 Scopus citations

  • A 206-294GHz 3-stage amplifier in 35nm InP mHEMT, using a thin-film microstrip environment

    Griffith, Z., Ha, W., Chen, P., Kim, D. H. & Brar, B., 2010, 2010 IEEE MTT-S International Microwave Symposium, MTT 2010. p. 57-60 4 p. 5515989. (IEEE MTT-S International Microwave Symposium Digest).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    9 Scopus citations

  • High performance InP mHEMTs on GaAs substrate with multiple interconnect layers

    Ha, W., Griffith, Z., Kim, D. H., Chen, P., Urteaga, M. & Brar, B., 2010, 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings. p. 140-143 4 p. 5516006. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    5 Scopus citations

  • InGaAs heterostructure FETs (HFETs) for beyond-roadmap CMOS

    Kim, D. H. & Del Alamo, J. A., 2010, Graphene, Ge/III-V, and Emerging Materials for Post-CMOS Applications 2. 5 ed. Electrochemical Society Inc., p. 203-206 4 p. (ECS Transactions; vol. 28, no. 5).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

  • Logic characteristics of 40 nm thin-channel InAs HEMTs

    Kim, T. W., Kim, D. H. & Del Alamo, J. A., 2010, 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings. p. 496-499 4 p. 5516257. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    22 Scopus citations

  • The prospects for 10 nm III-V CMOS

    Del Alamo, J. A. & Kim, D. H., 2010, Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010. p. 166-167 2 p. 5488901. (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    5 Scopus citations
  • 2009

    30 nm In0.7Ga0.3as inverted-type HEMTs with reduced gate leakage current for logic applications

    Kim, T. W., Kim, D. H. & Del Alamo, J. A., 2009, 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. p. 20.1.1-20.1.4 5424317. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    Open Access
    17 Scopus citations

  • Extraction of virtual-source injection velocity in sub-100 nm III-V HFETs

    Kim, D. H., Del Alamo, J. A., Antoniadis, D. A. & Brar, B., 2009, 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. p. 35.4.1-35.4.4 5424268. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    Open Access
    35 Scopus citations

  • Performance analysis of ultra-scaled InAs HEMTs

    Kharche, N., Klimeck, G., Kim, D. H., Del Alamo, J. A. & Luisier, M., 2009, 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. p. 20.3.1-20.3.4 5424315. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    20 Scopus citations

  • Quantum capacitance in scaled down III-V FETs

    Jin, D., Kim, D., Kim, T. & Del Alamo, J. A., 2009, 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. p. 20.4.1-20.4.4 5424312. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    Open Access
    36 Scopus citations

  • Scalability of sub-100 nm thin-channel InAs PHEMTs

    Kim, D. H. & Del Alamo, J. A., 2009, IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009. p. 132-135 4 p. 5012459. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    Open Access
    11 Scopus citations
  • 2008

    30 nm E-mode InAs PHEMTs for THz and future logic applications

    Kim, D. H. & Del Alamo, J. A., 2008, 2008 IEEE International Electron Devices Meeting, IEDM 2008. 4796796. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    60 Scopus citations

  • Enhancement-mode 130 nm InAs p-HEMTs having f T of 403 GHz and f max of 470 GHz fabricated using atomic-layer-etching technology

    Kim, T. W., Kim, D. H., Park, S. D., Shin, S. H., Yeom, G. Y., Jang, J. H. & Song, J. I., 2008, 66th DRC Device Research Conference Digest, DRC 2008. p. 211-212 2 p. 4800807. (Device Research Conference - Conference Digest, DRC).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    Open Access
    1 Scopus citations
  • 2007

    Beyond CMOS: Logic suitability of InGaAs HEMTs

    Del Alamo, J. A. & Kim, D. H., 2007, IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings. p. 51-54 4 p. 4265877. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    10 Scopus citations

  • Impact of lateral engineering on the logic performance of Sub-50 nm InGaAs HEMTs

    Kim, D. H. & Del Alamo, J. A., 2007, 2007 International Semiconductor Device Research Symposium, ISDRS. 4422512. (2007 International Semiconductor Device Research Symposium, ISDRS).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    1 Scopus citations

  • InGaAs CMOS: A "beyond-the-roadmap" logic technology?

    Del Alamo, J. A. & Kim, D. H., 2007, 65th DRC Device Research Conference. p. 201-202 2 p. 4373717. (65th DRC Device Research Conference).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    4 Scopus citations
  • 2006

    Beyond CMOS: Logic suitability of In0.7Ga0.3As HEMT

    Kim, D. H. & Delalamo, J. A., 2006, 2006 International Conference on Compound Semiconductor Manufacturing Technology. p. 251-254 4 p. (2006 International Conference on Compound Semiconductor Manufacturing Technology).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    12 Scopus citations

  • Nanometer scale InGaAs HEMT technology for ultra high speed IC

    Seo, K. K. & Kim, D. H., 2006, 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings. p. 30-35 6 p. 1634104. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials; vol. 2006).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    11 Scopus citations

  • Scaling behavior of in0.7Ga0.3as HEMTs for logic

    Kim, D. H. & Del Alamo, J. A., 2006, 2006 International Electron Devices Meeting Technical Digest, IEDM. 4154345. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    30 Scopus citations

  • The impact of side-recess spacing on the logic performance of 50 nm in 0.7Ga0.3As HEMTs

    Kim, D. H., Del Alamo, J. A., Lee, J. H. & Seo, K. K., 2006, 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings. p. 177-180 4 p. 1634142. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials; vol. 2006).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    24 Scopus citations
  • 2005

    Performance evaluation of 50 nm in0.7Ga0.3As HEMTs for beyond-CMOS logic applications

    Kim, D. H., Del Alamo, J. A., Lee, J. H. & Seo, K. S., 2005, IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. p. 767-770 4 p. 1609467. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2005).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    62 Scopus citations
  • 2004

    A new two-step recess technology using SiNx passivation and Pt-buried gate process and its application to 0.15μm Al0.6InAs/ In0.65GaAs HEMTs

    Kim, D. H., Lee, K. M., Lee, J. H. & Seo, K. S., 2004, Device Research Conference - Conference Digest, 62nd DRC. p. 69-70 2 p. III.-9. (Device Research Conference - Conference Digest, DRC).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

  • 2003

    ASymmetrically Recessed (ASR) 0.13μm In0.65GaAs HEMT's using Double-Deck Shaped (DDS) gate technology

    Kim, D. H., Yeon, S. J., Lee, J. H. & Seo, K. S., 2003, 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 184-185 2 p. 1272052. (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review