Personal profile
In Korean
박홍식 교수(IT대학 전자공학부)
Education
o (1997) B.A., Kyungpook National University, Daegu
o (1999) M.A., Kyungpook National University, Daegu
o (2011) Ph.D., Brown University, Rhode Island
o (1999) M.A., Kyungpook National University, Daegu
o (2011) Ph.D., Brown University, Rhode Island
Professional Experience
o (2014~Present) Professor, Kyungpook National University, Daegu
o (2011~2014) Research Staff Member, IBM T.J. Watson Research Center, NewYork
o (1999~2006) Professional Researcher, Samsung Advanced Institute of Technology (SAIT), Suwon
o (2011~2014) Research Staff Member, IBM T.J. Watson Research Center, NewYork
o (1999~2006) Professional Researcher, Samsung Advanced Institute of Technology (SAIT), Suwon
Research Interests
2D material/device fabrication, Compound semiconductor separation/transfer, remote epitaxy, heterogeneous material integration fabrication, Nano semiconductor device, biosensors, Extracellular vesicles, Cancer diagnosis, Semiconductor properties evaluation
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
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SDG 3 Good Health and Well-being
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Collaborations and top research areas from the last five years
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
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Determination of extracellular vesicle size and surface charge density via precise measurements of Brownian motion, electrophoretic velocity, and applied electric field in a single platform
Park, M., Kang, G., Kong, J., Moon, H., Lee, J., Bae, J. H., Baek, M. C., Kim, S., Noh, H. & Park, H., 1 May 2026, In: Sensors and Actuators B: Chemical. 454, 139570.Research output: Contribution to journal › Article › peer-review
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Evaluation of contact properties of AlGaN/GaN high-electron-mobility transistor using the bridge-contact resistance method
Lee, H., Lee, H., Hwang, S., Kim, D., Yun, J., Son, B., Kim, J. G. & Park, H., 1 Feb 2026, In: AIP Advances. 16, 2, 025058.Research output: Contribution to journal › Article › peer-review
Open Access -
High-Efficiency X-Band AlGaN/GaN/AlN HEMTs with 64.2 % PAE and 6.27 W/mm Continuous Wave Output Power Density
Kim, D., Choe, J., Lee, S., Hou, D., Nawaz, S., Lee, J. H., Lee, B. T., Lee, H., Son, H. I., Lee, H. S., Kim, J. G. & Park, H., 2026, (Accepted/In press) In: IEEE Electron Device Letters.Research output: Contribution to journal › Article › peer-review
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A universal 2D-on-SiC platform for heterogeneous integration of epitaxial III-N membranes
Kim, S. H., Lee, H., Kim, D. G., Kim, D., Kim, S., Kim, H., Ha, S., Yang, H., Jang, Y., Yoon, J., Lee, B. T., Lee, J. H., Chung, R. B. K., Park, H., Kim, S., Lee, T. H. & Kum, H. S., 21 Nov 2025, In: Science advances. 11, 47, eadz3605.Research output: Contribution to journal › Article › peer-review
Open Access1 Scopus citations -
Enhanced p-type GaN Ohmic contacts through strategic metal schemes and annealing
Kim, D., Moon, S. Y., Bae, S. B., Kwak, H. T., Park, H. & Lee, H. S., 1 Mar 2025, In: Applied Physics Letters. 126, 12, 122108.Research output: Contribution to journal › Article › peer-review
9 Scopus citations