Personal profile
In Korean
우지용 교수(IT대학 전자공학부)
Education
(2010), B.S., Hanyang University
(2012) M.S., Gwangju Institutue of Science and Technology
(2017) Ph.D., Pohang University of Science and Technology
(2012) M.S., Gwangju Institutue of Science and Technology
(2017) Ph.D., Pohang University of Science and Technology
Professional Experience
(2017~2018), Postdoctoral Researcher, Arizona State University
(2019~2019), Postdoctoral Researcher, Georgia Institue of Technoglogy
(2019~2020), ETRI
(2020~Present) Associate Professor, Kyungpook National University
(2019~2019), Postdoctoral Researcher, Georgia Institue of Technoglogy
(2019~2020), ETRI
(2020~Present) Associate Professor, Kyungpook National University
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Collaborations and top research areas from the last five years
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
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Electric Field-Moderated Filament Control for Cryogenic RRAM Synapse
Kim, Y. & Woo, J., 2026, In: IEEE Electron Device Letters. 47, 1, p. 61-64 4 p.Research output: Contribution to journal › Article › peer-review
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Optimization of Zr concentration in HZO-based charge trap layers for enhanced flash memory performance
Kim, S. H., Kim, D., Yoon, I., Lee, S., Jang, Y., Jeong, L. H., Lee, S., Woo, J. & Lee, J. W., Jan 2026, In: Applied Surface Science Advances. 31, 100914.Research output: Contribution to journal › Article › peer-review
Open Access -
Role of the channel on the memory window of HfZrOx ferroelectric field-effect transistors with p-type Si-doped InZnOx channel
Park, H., Lim, S., Lee, S., Lee, J. W. & Woo, J., Dec 2026, In: Scientific Reports. 16, 1, 1605.Research output: Contribution to journal › Article › peer-review
Open Access -
Comprehensive Reliability Assessment of WOx Engineering for Temperature-Resilient HfZrO2 FeCAP
Kim, E., Park, H., Jeong, J., Lim, S. & Woo, J., 2025, 2025 IEEE International Reliability Physics Symposium, IRPS 2025 - Proceedings. Institute of Electrical and Electronics Engineers Inc., (IEEE International Reliability Physics Symposium Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
3 Scopus citations -
Effect of SiO2 interfacial layer on InGaZnO-based memristors for neuromorphic computing applications
Myoung, S. J., Shin, D. H., Kim, D., Kim, C., Bae, J. H., Choi, S. J., Kim, D. M., Woo, J. & Kim, D. H., Mar 2025, In: Ceramics International. 51, 6, p. 7651-7656 6 p.Research output: Contribution to journal › Article › peer-review
3 Scopus citations