Material Science
Schottky Barrier
65%
Density
64%
Silicon
61%
Film
58%
Metal-Oxide-Semiconductor Field-Effect Transistor
58%
Cathode
57%
Oxidation Reaction
43%
Al2O3
40%
Electrical Property
40%
Annealing
37%
Schottky Diode
31%
Anode
27%
Heterojunction
27%
Type Metal
23%
Zirconia
23%
Graphene
23%
Indium Tin Oxide
22%
Thin Films
19%
Sapphire
19%
Aluminum
18%
Electronic Circuit
18%
Field Effect Transistor
17%
Electrical Resistivity
16%
Oxide Compound
16%
Current-Voltage Characteristic
14%
Buffer Layer
14%
Dielectric Material
14%
Multilayer
14%
Oxide Film
13%
Aluminum Nitride
13%
Silicide
11%
Epitaxial Layer
10%
Electrical Breakdown
10%
Capacitance
9%
Photosensor
9%
Surface Morphology
8%
Electromechanical Coupling
8%
Gallium Nitride
8%
Metal-Organic Chemical Vapor Deposition
8%
Scanning Electron Microscopy
7%
Optoelectronics
7%
Device Fabrication
7%
Nucleation
6%
Crystalline Material
6%
Aluminium Gallium Arsenide
5%
Wet Etching
5%
Liquid Phase Epitaxy
5%
Titanium
5%
Arsenic
5%
Amorphous Material
5%
Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Schottky Barrier
92%
Photodetector
67%
Field Emission
52%
Responsivity
41%
Polysilicon
35%
Silicon Substrate
31%
Field-Effect Transistor
28%
Heterojunctions
28%
Current Drain
27%
Cutoff Wavelength
23%
Sheet Resistance
23%
Photodiode
21%
Interlayer
19%
Tunnel Construction
18%
Sapphire Substrate
17%
High Current Density
17%
Annealing Effect
17%
Ohmic Contacts
16%
Low-Temperature
15%
Indium-Tin-Oxide
15%
Extinction Ratio
15%
Optoelectronics
15%
Gate Bias
15%
Buffer Layer
15%
Thin Films
14%
Heterostructures
13%
Epitaxial Layer
13%
Oxide Film
13%
Defects
12%
Si Substrate
12%
Image Sensor
12%
Metal Organic Chemical Vapor Deposition
12%
Surface Morphology
11%
Atomic Layer Deposition
11%
Nanometre
11%
Layer Graphene
11%
Using Sensor
11%
Layer Structure
11%
Surface Layer
11%
Barrier Height
11%
Gate Voltage
10%
Growth Method
10%
Dielectrics
10%
Aluminium Gallium Arsenide
9%
Interdiffusion
9%
Channel Layer
9%
Nucleation Site
8%
Coupling Coefficient
8%
Mode Operation
8%