Calculated based on number of publications stored in Pure and citations from Scopus
1988 …2024

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  • 2019

    Selective annealing effects of asymmetric Schottky-type AiGaN metal-semiconductor-metal UV-B sensor

    Seol, J. H., Park, B. J. & Hahm, S. H., 2019, State-of-the-Art Program on Compound Semiconductors, SOTAPOCS 62. Anderson, T., Hite, J., Lynch, R., O'Dwyer, C. & Douglas, E. (eds.). 6 ed. Electrochemical Society Inc., p. 19-23 5 p. (ECS Transactions; vol. 92, no. 6).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • 2017

    Drain current modeling of gallium nitride Schottky barrier MOSFETs

    Seol, J. H. & Hahm, S. H., 5 Dec 2017, QiR 2017 - 2017 15th International Conference on Quality in Research (QiR): International Symposium on Electrical and Computer Engineering. Institute of Electrical and Electronics Engineers Inc., p. 497-500 4 p. (QiR 2017 - 2017 15th International Conference on Quality in Research (QiR): International Symposium on Electrical and Computer Engineering; vol. 2017-December).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • 2016

    Deep trap levels responsible for current collapse in AlGaN/GaN MISHFET

    Seol, J. H., Kang, H. S., Lee, G. H., Lee, J. H. & Hahm, S. H., 2016, Gallium Nitride and Silicon Carbide Power Technologies 6. Dudley, M., Bakowski, M., Ohtani, N., Shenai, K. & Raghothamachar, B. (eds.). 12 ed. Electrochemical Society Inc., p. 131-137 7 p. (ECS Transactions; vol. 75, no. 12).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • Double-wavelength sensitive AlGaN/GaN MISIM UV sensor using multi-layer graphene as Schottky electrodes

    Kang, S. B., Lee, C. J., Won, C. H., Koo, Y. S., Lee, J. H., Hahm, S. H., Hong, S. K. & Cho, B. J., 7 Jan 2016, 14th International Conference on QiR (Quality in Research), QiR 2015 - In conjunction with 4th Asian Symposium on Material Processing, ASMP 2015 and International Conference in Saving Energy in Refrigeration and Air Conditioning, ICSERA 2015. Institute of Electrical and Electronics Engineers Inc., p. 30-33 4 p. 7374889. (14th International Conference on QiR (Quality in Research), QiR 2015 - In conjunction with 4th Asian Symposium on Material Processing, ASMP 2015 and International Conference in Saving Energy in Refrigeration and Air Conditioning, ICSERA 2015).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • GaN MISIM diode with high-k dielectrics of ZrO2 and Al2O3 for UV sensing

    Lee, G. H., Seol, J. H., An, J. K., Yun, J. Y. & Hahm, S. H., 2016, Low-Dimensional Nanoscale Electronic and Photonic Devices 9. O'Dwyer, C., Chueh, Y. L., He, J. H., Suzuki, M., Jin, S., Kim, S. W., Ho, J. C., Fan, Z., Li, Q., Hunter, G. W. & Takei, K. (eds.). 11 ed. Electrochemical Society Inc., p. 53-58 6 p. (ECS Transactions; vol. 75, no. 11).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • 2014

    GaN MSM UV sensor using multi-layer graphene schottky electrodes

    Lee, C. J., Cha, H. G., Hong, S. K., Doh, S. H., Koo, Y. S., Cho, B. J. & Hahm, S. H., 2014, Quantum, Nano, Micro Technologies and Applied Researches. p. 146-149 4 p. (Applied Mechanics and Materials; vol. 481).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    3 Scopus citations
  • 2013

    Characteristic of nickel oxide microbolometer

    Koo, G. H., Jung, Y. C., Hahm, S. H., Jung, D. G. & Lee, Y. S., 2013, Infrared Technology and Applications XXXIX. 87041P. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 8704).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations
  • Electrical characterization of GaN-channel MOSFETs

    Jasinski, J., Lukasiak, L., Jakubowski, A., Kim, D. K., Kim, D. S., Hahm, S. H. & Lee, J. H., 2013, Electron Technology Conference 2013. 89020U. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 8902).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • High UV-visible rejection ratio of dual-wavelength detecting MISIM UV sensor with a thin Al2O3 layer

    Lee, C. J., Cha, H. G., Won, C. H., Lee, J. H. & Hahm, S. H., 2013, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 6628072. (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations
  • 2012

    Dual-band responsivity of AlGaN/GaN MSM UV photodiode

    Kwon, Y. J., Lee, C. J., Kim, D. K. & Hahm, S. H., 2012, 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012. 6482847. (2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    2 Scopus citations
  • Enhanced UV-visible rejection ratio in an MSM UV photodetector fabricated on N-face GaN by thermal annealing effects

    Lee, C. J., Kwon, Y. J., Cha, H. G. & Hahm, S. H., 2012, 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012. 6482830. (2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations
  • Formation of GaN film on Si for microbolometer

    Lee, Y. S., Kim, D. S., Won, C. H., Kim, J. H., Bu, C. H., Hahm, S. H., Jung, Y. C. & Lee, J. H., 2012, Infrared Technology and Applications XXXVIII. SPIE, 835318. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 8353).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    2 Scopus citations
  • 2011

    UV-A selective photo-responsivity in a GaN MSM photodetector using ITO schottky electrodes

    Lee, C. J., Koo, G. H., Kim, D. S., Yun, J. Y., Lee, J. H. & Hahm, S. H., 2011, 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011. 6117620. (2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • Vertical GaN schottky barrier diode on an N-face GaN layer formed by ELOG and laser-lift-off technique for high-power application

    Kwon, Y. J., Lee, C. J., Kim, D. K., Lee, H. B. & Hahm, S. H., 2011, 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011. 6117622. (2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations
  • 2010

    Body bias effect of GaN schottky barrier MOSFET with ITO source/drain

    Lee, C. J., Kim, T. H., Kim, D. S., Sung, S. Y., Jung, B. K., Heo, Y. W., Lee, J. H. & Hahm, S. H., 2010, 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010. 5713729. (2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • GaN schottky barrier MOSFET using indium-tin-oxide as source, drain and gate material

    Kim, T. H., Jung, B. K., Lee, C. J., Kim, D. S., Sung, S. Y., Heo, Y. W., Lee, J. H. & Hahm, S. H., 2010, 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010. 5713728. (2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • 2009

    Superior contact properties of trench filled contact for 3D MOSFET

    Jung, J. H., Lee, H. B., Ha, J. B., Kang, H. S., Lee, J. H. & Hahm, S. H., 2009, 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009. p. 469-472 4 p. 5394214. (2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • 2005

    Normally-off GaN n-MOSFET with schottky-barrier source and drain on a p-GaN on silicon substrate

    Lee, H. B., Cho, H. I., Back, K. H., An, H. S., Lee, J. H. & Hahm, S. H., 2005, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc., p. 791-794 4 p. 1635396. (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • Performance analysis of high speed multimedia streaming card for streaming server

    Jung, B. K., Woo-Seok, S., Kim, S. W., Kim, M. J. & Hahm, S. H., 2005, ISSCS 2005: International Symposium on Signals, Circuits and Systems - Proceedings. p. 637-640 4 p. 1511321. (ISSCS 2005: International Symposium on Signals, Circuits and Systems - Proceedings; vol. 2).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations
  • 2001

    Properties and applications of RuO2/GaN and related Schottky contacts

    Hahm, S. H., Lee, Y. H., Lee, M. B. & Lee, J. H., 2001, 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. Iwai, H., Qu, X.-P., Li, B.-Z., Ru, G.-P. & Yu, P. (eds.). Institute of Electrical and Electronics Engineers Inc., p. 1280-1285 6 p. 982134. (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings; vol. 2).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • 1998

    Fabrication of Nanometer Scale Structure Using Thin Film Stress

    Park, D. I., Hahm, S. H., Lee, J. H. & Lee, J. H., 1998, Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference. Yoo, H. J., Okazaki, S., Ahn, J., Kim, O. & Komuro, M. (eds.). Institute of Electrical and Electronics Engineers Inc., p. 156-157 2 p. 730021. (Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference; vol. 1998-July).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review