0.4-μm 3.3-V 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuit

Byung Gil Jeon; Mun Kyu Choi; Yoonjong Song; Seung Kyu Oh; Yeonbae Chung; Kang Deog Suh; Kinam Kim

doi:10.1109/4.881216

0.4-μm 3.3-V 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuit

Byung Gil Jeon, Mun Kyu Choi, Yoonjong Song, Seung Kyu Oh, Yeonbae Chung, Kang Deog Suh, Kinam Kim

School of Electronics Engineering

Samsung

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

A 0.4-μm 3.3-V 1T1C 4-Mb nonvolatile ferroelectric random access memory (FRAM) was developed. The FRAM relies on the use of a reference scheme optimally adapted to the entire cell population of an individual device. A simple voltage level detector protects the device against data loss during drops in supply voltage. Finally, a special test mode was implemented to optimize read pulse width. By using these techniques, a high-performance 1T1C 4-Mb FRAM was successfully developed.

Original language	English
Pages (from-to)	1690-1694
Number of pages	5
Journal	IEEE Journal of Solid-State Circuits
Volume	35
Issue number	11
DOIs	https://doi.org/10.1109/4.881216
State	Published - Nov 2000

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title = "0.4-μm 3.3-V 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuit",

abstract = "A 0.4-μm 3.3-V 1T1C 4-Mb nonvolatile ferroelectric random access memory (FRAM) was developed. The FRAM relies on the use of a reference scheme optimally adapted to the entire cell population of an individual device. A simple voltage level detector protects the device against data loss during drops in supply voltage. Finally, a special test mode was implemented to optimize read pulse width. By using these techniques, a high-performance 1T1C 4-Mb FRAM was successfully developed.",

author = "Jeon, {Byung Gil} and Choi, {Mun Kyu} and Yoonjong Song and Oh, {Seung Kyu} and Yeonbae Chung and Suh, {Kang Deog} and Kinam Kim",

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AU - Jeon, Byung Gil

AU - Choi, Mun Kyu

AU - Song, Yoonjong

AU - Oh, Seung Kyu

AU - Chung, Yeonbae

AU - Suh, Kang Deog

AU - Kim, Kinam

PY - 2000/11

Y1 - 2000/11

N2 - A 0.4-μm 3.3-V 1T1C 4-Mb nonvolatile ferroelectric random access memory (FRAM) was developed. The FRAM relies on the use of a reference scheme optimally adapted to the entire cell population of an individual device. A simple voltage level detector protects the device against data loss during drops in supply voltage. Finally, a special test mode was implemented to optimize read pulse width. By using these techniques, a high-performance 1T1C 4-Mb FRAM was successfully developed.

AB - A 0.4-μm 3.3-V 1T1C 4-Mb nonvolatile ferroelectric random access memory (FRAM) was developed. The FRAM relies on the use of a reference scheme optimally adapted to the entire cell population of an individual device. A simple voltage level detector protects the device against data loss during drops in supply voltage. Finally, a special test mode was implemented to optimize read pulse width. By using these techniques, a high-performance 1T1C 4-Mb FRAM was successfully developed.

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JF - IEEE Journal of Solid-State Circuits

IS - 11

ER -

0.4-μm 3.3-V 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuit

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