0.4-μm 3.3-V 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuit

Byung Gil Jeon; Mun Kyu Choi; Yoonjong Song; Seung Kyu Oh; Yeonbae Chung; Kang Deog Suh; Kinam Kim

doi:10.1109/4.881216

0.4-μm 3.3-V 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuit

Byung Gil Jeon
, Mun Kyu Choi
, Yoonjong Song
, Seung Kyu Oh
, Yeonbae Chung
, Kang Deog Suh
, Kinam Kim

School of Electronics Engineering

Samsung

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

A 0.4-μm 3.3-V 1T1C 4-Mb nonvolatile ferroelectric random access memory (FRAM) was developed. The FRAM relies on the use of a reference scheme optimally adapted to the entire cell population of an individual device. A simple voltage level detector protects the device against data loss during drops in supply voltage. Finally, a special test mode was implemented to optimize read pulse width. By using these techniques, a high-performance 1T1C 4-Mb FRAM was successfully developed.

Original language	English
Pages (from-to)	1690-1694
Number of pages	5
Journal	IEEE Journal of Solid-State Circuits
Volume	35
Issue number	11
DOIs	https://doi.org/10.1109/4.881216
State	Published - Nov 2000

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10.1109/4.881216

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title = "0.4-μm 3.3-V 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuit",

abstract = "A 0.4-μm 3.3-V 1T1C 4-Mb nonvolatile ferroelectric random access memory (FRAM) was developed. The FRAM relies on the use of a reference scheme optimally adapted to the entire cell population of an individual device. A simple voltage level detector protects the device against data loss during drops in supply voltage. Finally, a special test mode was implemented to optimize read pulse width. By using these techniques, a high-performance 1T1C 4-Mb FRAM was successfully developed.",

author = "Jeon, \{Byung Gil\} and Choi, \{Mun Kyu\} and Yoonjong Song and Oh, \{Seung Kyu\} and Yeonbae Chung and Suh, \{Kang Deog\} and Kinam Kim",

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T1 - 0.4-μm 3.3-V 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuit

AU - Jeon, Byung Gil

AU - Choi, Mun Kyu

AU - Song, Yoonjong

AU - Oh, Seung Kyu

AU - Chung, Yeonbae

AU - Suh, Kang Deog

AU - Kim, Kinam

PY - 2000/11

Y1 - 2000/11

N2 - A 0.4-μm 3.3-V 1T1C 4-Mb nonvolatile ferroelectric random access memory (FRAM) was developed. The FRAM relies on the use of a reference scheme optimally adapted to the entire cell population of an individual device. A simple voltage level detector protects the device against data loss during drops in supply voltage. Finally, a special test mode was implemented to optimize read pulse width. By using these techniques, a high-performance 1T1C 4-Mb FRAM was successfully developed.

AB - A 0.4-μm 3.3-V 1T1C 4-Mb nonvolatile ferroelectric random access memory (FRAM) was developed. The FRAM relies on the use of a reference scheme optimally adapted to the entire cell population of an individual device. A simple voltage level detector protects the device against data loss during drops in supply voltage. Finally, a special test mode was implemented to optimize read pulse width. By using these techniques, a high-performance 1T1C 4-Mb FRAM was successfully developed.

UR - https://www.scopus.com/pages/publications/0034316380

U2 - 10.1109/4.881216

DO - 10.1109/4.881216

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JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

IS - 11

ER -

0.4-μm 3.3-V 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuit

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