1.3 μm vertical-cavity surface-emitting lasers using heavy ion implantation and dielectric mirror

Young Gu Ju; Won Suk Hahn; Jae Heon Shin; Jong Hee Kim; Jeong Rae Roh; O. Kyun Kwon; Byung Soo Yoo

doi:10.1143/jjap.41.l1370

1.3 μm vertical-cavity surface-emitting lasers using heavy ion implantation and dielectric mirror

Young Gu Ju, Won Suk Hahn, Jae Heon Shin, Jong Hee Kim, Jeong Rae Roh, O. Kyun Kwon, Byung Soo Yoo

Department of Physics Education

Electronics and Telecommunications Research Institute

Research output: Contribution to journal › Letter › peer-review

2 Scopus citations

Abstract

A new type of 1310-nm vertical-cavity surface-emitting laser (VCSEL) is proposed, incorporating heavy ion implantation, dielectric mirror, and regrowth. The structure is based on stable active material and well-established processing techniques. The fabricated laser operates under a pulsed condition that is emitted at 1340 nm.

Original language	English
Pages (from-to)	L1370-L1372
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	41
Issue number	12 A
DOIs	https://doi.org/10.1143/jjap.41.l1370
State	Published - 1 Dec 2002

Keywords

Implantation
InAlGaAs
Long wavelength
Optical communication
Optical transmitter
Semiconductor laser
VCSEL

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10.1143/jjap.41.l1370

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title = "1.3 μm vertical-cavity surface-emitting lasers using heavy ion implantation and dielectric mirror",

abstract = "A new type of 1310-nm vertical-cavity surface-emitting laser (VCSEL) is proposed, incorporating heavy ion implantation, dielectric mirror, and regrowth. The structure is based on stable active material and well-established processing techniques. The fabricated laser operates under a pulsed condition that is emitted at 1340 nm.",

keywords = "Implantation, InAlGaAs, Long wavelength, Optical communication, Optical transmitter, Semiconductor laser, VCSEL",

author = "Ju, {Young Gu} and Hahn, {Won Suk} and Shin, {Jae Heon} and Kim, {Jong Hee} and Roh, {Jeong Rae} and Kwon, {O. Kyun} and Yoo, {Byung Soo}",

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doi = "10.1143/jjap.41.l1370",

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T1 - 1.3 μm vertical-cavity surface-emitting lasers using heavy ion implantation and dielectric mirror

AU - Ju, Young Gu

AU - Hahn, Won Suk

AU - Shin, Jae Heon

AU - Kim, Jong Hee

AU - Roh, Jeong Rae

AU - Kwon, O. Kyun

AU - Yoo, Byung Soo

PY - 2002/12/1

Y1 - 2002/12/1

N2 - A new type of 1310-nm vertical-cavity surface-emitting laser (VCSEL) is proposed, incorporating heavy ion implantation, dielectric mirror, and regrowth. The structure is based on stable active material and well-established processing techniques. The fabricated laser operates under a pulsed condition that is emitted at 1340 nm.

AB - A new type of 1310-nm vertical-cavity surface-emitting laser (VCSEL) is proposed, incorporating heavy ion implantation, dielectric mirror, and regrowth. The structure is based on stable active material and well-established processing techniques. The fabricated laser operates under a pulsed condition that is emitted at 1340 nm.

KW - Implantation

KW - InAlGaAs

KW - Long wavelength

KW - Optical communication

KW - Optical transmitter

KW - Semiconductor laser

KW - VCSEL

UR - http://www.scopus.com/inward/record.url?scp=0036973434&partnerID=8YFLogxK

U2 - 10.1143/jjap.41.l1370

DO - 10.1143/jjap.41.l1370

M3 - Letter

AN - SCOPUS:0036973434

SN - 0021-4922

VL - 41

SP - L1370-L1372

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 12 A

ER -

1.3 μm vertical-cavity surface-emitting lasers using heavy ion implantation and dielectric mirror

Abstract

Keywords

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