1.3 μm vertical-cavity surface-emitting lasers using heavy ion implantation and dielectric mirror

  • Young Gu Ju
  • , Won Suk Hahn
  • , Jae Heon Shin
  • , Jong Hee Kim
  • , Jeong Rae Roh
  • , O. Kyun Kwon
  • , Byung Soo Yoo

Research output: Contribution to journalLetterpeer-review

2 Scopus citations

Abstract

A new type of 1310-nm vertical-cavity surface-emitting laser (VCSEL) is proposed, incorporating heavy ion implantation, dielectric mirror, and regrowth. The structure is based on stable active material and well-established processing techniques. The fabricated laser operates under a pulsed condition that is emitted at 1340 nm.

Original languageEnglish
Pages (from-to)L1370-L1372
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number12 A
DOIs
StatePublished - 1 Dec 2002

Keywords

  • Implantation
  • InAlGaAs
  • Long wavelength
  • Optical communication
  • Optical transmitter
  • Semiconductor laser
  • VCSEL

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