Abstract
A new type of 1310-nm vertical-cavity surface-emitting laser (VCSEL) is proposed, incorporating heavy ion implantation, dielectric mirror, and regrowth. The structure is based on stable active material and well-established processing techniques. The fabricated laser operates under a pulsed condition that is emitted at 1340 nm.
| Original language | English |
|---|---|
| Pages (from-to) | L1370-L1372 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 41 |
| Issue number | 12 A |
| DOIs | |
| State | Published - 1 Dec 2002 |
Keywords
- Implantation
- InAlGaAs
- Long wavelength
- Optical communication
- Optical transmitter
- Semiconductor laser
- VCSEL