1.55-μm bottom-emitting InAIGaAs VCSELs with Al2O 3/a-Si thin-film pairs as a top mirror

Hyun Woo Song; Won Seok Han; Jong Hee Kim; O. Kyun Kwon; Young Gu Ju; Jong Hyun Lee; Sang Hee Kopark; Seung Goo Kang

1.55-μm bottom-emitting InAIGaAs VCSELs with Al₂O ₃/a-Si thin-film pairs as a top mirror

Hyun Woo Song, Won Seok Han, Jong Hee Kim, O. Kyun Kwon, Young Gu Ju, Jong Hyun Lee, Sang Hee Kopark, Seung Goo Kang

Department of Physics Education

Research output: Contribution to journal › Conference article › peer-review

Abstract

A 1.55 μm InAlGaAs/InP vertical cavity surface emitting lasers (VCSEL) with a high quality Al₂O₃/a-Si mirror using single-step metallorganic chemical vapor deposition (MOCVD) were investigated. Thermally favorable InP layers were positioned on both sides of thin active region to spread the generated heat effectively. Thin and highly doped tunnel junction layers of C-doped InAlAs and Si-doped InP were located at field intensity node to minimize optical loss. Fabricated VCSEL having the aperture diameter of about 10 μm shows the maximum output power of 0.44 mW in continuous-wave mode at room temperature.

Original language	English
Pages (from-to)	410-411
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	1
State	Published - 2004
Event	2004 IEEE LEOS Annual Meeting Conference Proceedings, LEOS 2004 - Rio Grande, Puerto Rico Duration: 7 Nov 2004 → 11 Nov 2004

Cite this

@article{55a617d18c01410aa033e6a89fc8671c,

title = "1.55-μm bottom-emitting InAIGaAs VCSELs with Al2O 3/a-Si thin-film pairs as a top mirror",

abstract = "A 1.55 μm InAlGaAs/InP vertical cavity surface emitting lasers (VCSEL) with a high quality Al2O3/a-Si mirror using single-step metallorganic chemical vapor deposition (MOCVD) were investigated. Thermally favorable InP layers were positioned on both sides of thin active region to spread the generated heat effectively. Thin and highly doped tunnel junction layers of C-doped InAlAs and Si-doped InP were located at field intensity node to minimize optical loss. Fabricated VCSEL having the aperture diameter of about 10 μm shows the maximum output power of 0.44 mW in continuous-wave mode at room temperature.",

author = "Song, {Hyun Woo} and Han, {Won Seok} and Kim, {Jong Hee} and Kwon, {O. Kyun} and Ju, {Young Gu} and Lee, {Jong Hyun} and Kopark, {Sang Hee} and Kang, {Seung Goo}",

year = "2004",

language = "English",

volume = "1",

pages = "410--411",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2004 IEEE LEOS Annual Meeting Conference Proceedings, LEOS 2004 ; Conference date: 07-11-2004 Through 11-11-2004",

}

TY - JOUR

T1 - 1.55-μm bottom-emitting InAIGaAs VCSELs with Al2O 3/a-Si thin-film pairs as a top mirror

AU - Song, Hyun Woo

AU - Han, Won Seok

AU - Kim, Jong Hee

AU - Kwon, O. Kyun

AU - Ju, Young Gu

AU - Lee, Jong Hyun

AU - Kopark, Sang Hee

AU - Kang, Seung Goo

PY - 2004

Y1 - 2004

N2 - A 1.55 μm InAlGaAs/InP vertical cavity surface emitting lasers (VCSEL) with a high quality Al2O3/a-Si mirror using single-step metallorganic chemical vapor deposition (MOCVD) were investigated. Thermally favorable InP layers were positioned on both sides of thin active region to spread the generated heat effectively. Thin and highly doped tunnel junction layers of C-doped InAlAs and Si-doped InP were located at field intensity node to minimize optical loss. Fabricated VCSEL having the aperture diameter of about 10 μm shows the maximum output power of 0.44 mW in continuous-wave mode at room temperature.

AB - A 1.55 μm InAlGaAs/InP vertical cavity surface emitting lasers (VCSEL) with a high quality Al2O3/a-Si mirror using single-step metallorganic chemical vapor deposition (MOCVD) were investigated. Thermally favorable InP layers were positioned on both sides of thin active region to spread the generated heat effectively. Thin and highly doped tunnel junction layers of C-doped InAlAs and Si-doped InP were located at field intensity node to minimize optical loss. Fabricated VCSEL having the aperture diameter of about 10 μm shows the maximum output power of 0.44 mW in continuous-wave mode at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=14244250388&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:14244250388

SN - 1092-8081

VL - 1

SP - 410

EP - 411

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - 2004 IEEE LEOS Annual Meeting Conference Proceedings, LEOS 2004

Y2 - 7 November 2004 through 11 November 2004

ER -

1.55-μm bottom-emitting InAIGaAs VCSELs with Al₂O ₃/a-Si thin-film pairs as a top mirror

Abstract

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