1.55 μm bottom-emitting InAlGaAs VCSELs with Al2O 3/a-Si thin-film pairs as top mirror

H. W. Song; W. S. Han; J. H. Kim; O. K. Kwon; Y. G. Ju; J. H. Lee; S. H. KoPark; S. G. Kang

doi:10.1049/el:20045240

1.55 μm bottom-emitting InAlGaAs VCSELs with Al₂O ₃/a-Si thin-film pairs as top mirror

H. W. Song
, W. S. Han
, J. H. Kim
, O. K. Kwon
, Y. G. Ju
, J. H. Lee
, S. H. KoPark
, S. G. Kang

Department of Physics Education

Electronics and Telecommunications Research Institute
XL Photonics, Inc.

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A 1.55 μm InAlGaAs/InP vertical-cavity surface-emitting laser grown by metal-organic chemical vapour deposition is presented. Al₂O ₃/a-Si thin-film pairs and InAlGaAs/InAlAs epitaxial layers are used as a top mirror and a bottom-side output coupler, respectively. Direct modulation characteristics through singlemode fibre are reported at a speed of 2.5 Gbit/s.

Original language	English
Pages (from-to)	868-869
Number of pages	2
Journal	Electronics Letters
Volume	40
Issue number	14
DOIs	https://doi.org/10.1049/el:20045240
State	Published - 8 Jul 2004

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title = "1.55 μm bottom-emitting InAlGaAs VCSELs with Al2O 3/a-Si thin-film pairs as top mirror",

abstract = "A 1.55 μm InAlGaAs/InP vertical-cavity surface-emitting laser grown by metal-organic chemical vapour deposition is presented. Al2O 3/a-Si thin-film pairs and InAlGaAs/InAlAs epitaxial layers are used as a top mirror and a bottom-side output coupler, respectively. Direct modulation characteristics through singlemode fibre are reported at a speed of 2.5 Gbit/s.",

author = "Song, \{H. W.\} and Han, \{W. S.\} and Kim, \{J. H.\} and Kwon, \{O. K.\} and Ju, \{Y. G.\} and Lee, \{J. H.\} and KoPark, \{S. H.\} and Kang, \{S. G.\}",

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doi = "10.1049/el:20045240",

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journal = "Electronics Letters",

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T1 - 1.55 μm bottom-emitting InAlGaAs VCSELs with Al2O 3/a-Si thin-film pairs as top mirror

AU - Song, H. W.

AU - Han, W. S.

AU - Kim, J. H.

AU - Kwon, O. K.

AU - Ju, Y. G.

AU - Lee, J. H.

AU - KoPark, S. H.

AU - Kang, S. G.

PY - 2004/7/8

Y1 - 2004/7/8

N2 - A 1.55 μm InAlGaAs/InP vertical-cavity surface-emitting laser grown by metal-organic chemical vapour deposition is presented. Al2O 3/a-Si thin-film pairs and InAlGaAs/InAlAs epitaxial layers are used as a top mirror and a bottom-side output coupler, respectively. Direct modulation characteristics through singlemode fibre are reported at a speed of 2.5 Gbit/s.

AB - A 1.55 μm InAlGaAs/InP vertical-cavity surface-emitting laser grown by metal-organic chemical vapour deposition is presented. Al2O 3/a-Si thin-film pairs and InAlGaAs/InAlAs epitaxial layers are used as a top mirror and a bottom-side output coupler, respectively. Direct modulation characteristics through singlemode fibre are reported at a speed of 2.5 Gbit/s.

UR - https://www.scopus.com/pages/publications/3142705741

U2 - 10.1049/el:20045240

DO - 10.1049/el:20045240

M3 - Article

AN - SCOPUS:3142705741

SN - 0013-5194

VL - 40

SP - 868

EP - 869

JO - Electronics Letters

JF - Electronics Letters

IS - 14

ER -

1.55 μm bottom-emitting InAlGaAs VCSELs with Al₂O ₃/a-Si thin-film pairs as top mirror

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