1.55 μm bottom-emitting InAlGaAs VCSELs with Al2O 3/a-Si thin-film pairs as top mirror

H. W. Song; W. S. Han; J. H. Kim; O. K. Kwon; Y. G. Ju; J. H. Lee; S. H. KoPark; S. G. Kang

doi:10.1049/el:20045240

1.55 μm bottom-emitting InAlGaAs VCSELs with Al₂O ₃/a-Si thin-film pairs as top mirror

H. W. Song, W. S. Han, J. H. Kim, O. K. Kwon, Y. G. Ju, J. H. Lee, S. H. KoPark, S. G. Kang

Department of Physics Education

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A 1.55 μm InAlGaAs/InP vertical-cavity surface-emitting laser grown by metal-organic chemical vapour deposition is presented. Al₂O ₃/a-Si thin-film pairs and InAlGaAs/InAlAs epitaxial layers are used as a top mirror and a bottom-side output coupler, respectively. Direct modulation characteristics through singlemode fibre are reported at a speed of 2.5 Gbit/s.

Original language	English
Pages (from-to)	868-869
Number of pages	2
Journal	Electronics Letters
Volume	40
Issue number	14
DOIs	https://doi.org/10.1049/el:20045240
State	Published - 8 Jul 2004

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title = "1.55 μm bottom-emitting InAlGaAs VCSELs with Al2O 3/a-Si thin-film pairs as top mirror",

abstract = "A 1.55 μm InAlGaAs/InP vertical-cavity surface-emitting laser grown by metal-organic chemical vapour deposition is presented. Al2O 3/a-Si thin-film pairs and InAlGaAs/InAlAs epitaxial layers are used as a top mirror and a bottom-side output coupler, respectively. Direct modulation characteristics through singlemode fibre are reported at a speed of 2.5 Gbit/s.",

author = "Song, \{H. W.\} and Han, \{W. S.\} and Kim, \{J. H.\} and Kwon, \{O. K.\} and Ju, \{Y. G.\} and Lee, \{J. H.\} and KoPark, \{S. H.\} and Kang, \{S. G.\}",

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doi = "10.1049/el:20045240",

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T1 - 1.55 μm bottom-emitting InAlGaAs VCSELs with Al2O 3/a-Si thin-film pairs as top mirror

AU - Song, H. W.

AU - Han, W. S.

AU - Kim, J. H.

AU - Kwon, O. K.

AU - Ju, Y. G.

AU - Lee, J. H.

AU - KoPark, S. H.

AU - Kang, S. G.

PY - 2004/7/8

Y1 - 2004/7/8

N2 - A 1.55 μm InAlGaAs/InP vertical-cavity surface-emitting laser grown by metal-organic chemical vapour deposition is presented. Al2O 3/a-Si thin-film pairs and InAlGaAs/InAlAs epitaxial layers are used as a top mirror and a bottom-side output coupler, respectively. Direct modulation characteristics through singlemode fibre are reported at a speed of 2.5 Gbit/s.

AB - A 1.55 μm InAlGaAs/InP vertical-cavity surface-emitting laser grown by metal-organic chemical vapour deposition is presented. Al2O 3/a-Si thin-film pairs and InAlGaAs/InAlAs epitaxial layers are used as a top mirror and a bottom-side output coupler, respectively. Direct modulation characteristics through singlemode fibre are reported at a speed of 2.5 Gbit/s.

UR - https://www.scopus.com/pages/publications/3142705741

U2 - 10.1049/el:20045240

DO - 10.1049/el:20045240

M3 - Article

AN - SCOPUS:3142705741

SN - 0013-5194

VL - 40

SP - 868

EP - 869

JO - Electronics Letters

JF - Electronics Letters

IS - 14

ER -

1.55 μm bottom-emitting InAlGaAs VCSELs with Al₂O ₃/a-Si thin-film pairs as top mirror

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