1.55 μm vertical-cavity surface-emitting lasers using ion implantation and tunneling junction

Young Gu Ju; Won Suk Han; Jong Hee Kim; Jae Heon Shin; Byung Soo Yoo; O. Kyun Kwon

doi:10.1143/jjap.42.l301

1.55 μm vertical-cavity surface-emitting lasers using ion implantation and tunneling junction

Young Gu Ju, Won Suk Han, Jong Hee Kim, Jae Heon Shin, Byung Soo Yoo, O. Kyun Kwon

Department of Physics Education

Electronics and Telecommunications Research Institute

Research output: Contribution to journal › Letter › peer-review

Abstract

We propose a new type of 1550 nm vertical-cavity surface-emitting laser incorporating proton implantation and a tunneling junction. The structure relies on a stable material and well-established processing techniques. The fabricated laser operates under pulsed conditions emitting at 1575 nm.

Original language	English
Pages (from-to)	L301-L303
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	42
Issue number	3 B
DOIs	https://doi.org/10.1143/jjap.42.l301
State	Published - 15 Mar 2003

Keywords

Implantation
InAlGaAs
Long wavelength
Optical communication
Optical transmitter
Semiconductor laser
VCSEL

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10.1143/jjap.42.l301

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title = "1.55 μm vertical-cavity surface-emitting lasers using ion implantation and tunneling junction",

abstract = "We propose a new type of 1550 nm vertical-cavity surface-emitting laser incorporating proton implantation and a tunneling junction. The structure relies on a stable material and well-established processing techniques. The fabricated laser operates under pulsed conditions emitting at 1575 nm.",

keywords = "Implantation, InAlGaAs, Long wavelength, Optical communication, Optical transmitter, Semiconductor laser, VCSEL",

author = "Ju, {Young Gu} and Han, {Won Suk} and Kim, {Jong Hee} and Shin, {Jae Heon} and Yoo, {Byung Soo} and Kwon, {O. Kyun}",

year = "2003",

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doi = "10.1143/jjap.42.l301",

language = "English",

volume = "42",

pages = "L301--L303",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

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T1 - 1.55 μm vertical-cavity surface-emitting lasers using ion implantation and tunneling junction

AU - Ju, Young Gu

AU - Han, Won Suk

AU - Kim, Jong Hee

AU - Shin, Jae Heon

AU - Yoo, Byung Soo

AU - Kwon, O. Kyun

PY - 2003/3/15

Y1 - 2003/3/15

N2 - We propose a new type of 1550 nm vertical-cavity surface-emitting laser incorporating proton implantation and a tunneling junction. The structure relies on a stable material and well-established processing techniques. The fabricated laser operates under pulsed conditions emitting at 1575 nm.

AB - We propose a new type of 1550 nm vertical-cavity surface-emitting laser incorporating proton implantation and a tunneling junction. The structure relies on a stable material and well-established processing techniques. The fabricated laser operates under pulsed conditions emitting at 1575 nm.

KW - Implantation

KW - InAlGaAs

KW - Long wavelength

KW - Optical communication

KW - Optical transmitter

KW - Semiconductor laser

KW - VCSEL

UR - http://www.scopus.com/inward/record.url?scp=0038361024&partnerID=8YFLogxK

U2 - 10.1143/jjap.42.l301

DO - 10.1143/jjap.42.l301

M3 - Letter

AN - SCOPUS:0038361024

SN - 0021-4922

VL - 42

SP - L301-L303

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 3 B

ER -

1.55 μm vertical-cavity surface-emitting lasers using ion implantation and tunneling junction

Abstract

Keywords

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