1.55 μm vertical-cavity surface-emitting lasers using ion implantation and tunneling junction

Young Gu Ju; Won Suk Han; Jong Hee Kim; Jae Heon Shin; Byung Soo Yoo; O. Kyun Kwon

doi:10.1143/jjap.42.l301

1.55 μm vertical-cavity surface-emitting lasers using ion implantation and tunneling junction

Young Gu Ju
, Won Suk Han
, Jong Hee Kim
, Jae Heon Shin
, Byung Soo Yoo
, O. Kyun Kwon

Department of Physics Education

Electronics and Telecommunications Research Institute

Research output: Contribution to journal › Letter › peer-review

Abstract

We propose a new type of 1550 nm vertical-cavity surface-emitting laser incorporating proton implantation and a tunneling junction. The structure relies on a stable material and well-established processing techniques. The fabricated laser operates under pulsed conditions emitting at 1575 nm.

Original language	English
Pages (from-to)	L301-L303
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	42
Issue number	3 B
DOIs	https://doi.org/10.1143/jjap.42.l301
State	Published - 15 Mar 2003

Keywords

Implantation
InAlGaAs
Long wavelength
Optical communication
Optical transmitter
Semiconductor laser
VCSEL

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10.1143/jjap.42.l301

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title = "1.55 μm vertical-cavity surface-emitting lasers using ion implantation and tunneling junction",

abstract = "We propose a new type of 1550 nm vertical-cavity surface-emitting laser incorporating proton implantation and a tunneling junction. The structure relies on a stable material and well-established processing techniques. The fabricated laser operates under pulsed conditions emitting at 1575 nm.",

keywords = "Implantation, InAlGaAs, Long wavelength, Optical communication, Optical transmitter, Semiconductor laser, VCSEL",

author = "Ju, \{Young Gu\} and Han, \{Won Suk\} and Kim, \{Jong Hee\} and Shin, \{Jae Heon\} and Yoo, \{Byung Soo\} and Kwon, \{O. Kyun\}",

year = "2003",

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doi = "10.1143/jjap.42.l301",

language = "English",

volume = "42",

pages = "L301--L303",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

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T1 - 1.55 μm vertical-cavity surface-emitting lasers using ion implantation and tunneling junction

AU - Ju, Young Gu

AU - Han, Won Suk

AU - Kim, Jong Hee

AU - Shin, Jae Heon

AU - Yoo, Byung Soo

AU - Kwon, O. Kyun

PY - 2003/3/15

Y1 - 2003/3/15

N2 - We propose a new type of 1550 nm vertical-cavity surface-emitting laser incorporating proton implantation and a tunneling junction. The structure relies on a stable material and well-established processing techniques. The fabricated laser operates under pulsed conditions emitting at 1575 nm.

AB - We propose a new type of 1550 nm vertical-cavity surface-emitting laser incorporating proton implantation and a tunneling junction. The structure relies on a stable material and well-established processing techniques. The fabricated laser operates under pulsed conditions emitting at 1575 nm.

KW - Implantation

KW - InAlGaAs

KW - Long wavelength

KW - Optical communication

KW - Optical transmitter

KW - Semiconductor laser

KW - VCSEL

UR - https://www.scopus.com/pages/publications/0038361024

U2 - 10.1143/jjap.42.l301

DO - 10.1143/jjap.42.l301

M3 - Letter

AN - SCOPUS:0038361024

SN - 0021-4922

VL - 42

SP - L301-L303

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 3 B

ER -

1.55 μm vertical-cavity surface-emitting lasers using ion implantation and tunneling junction

Abstract

Keywords

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