1/f-noise in AlGaN/GaN nanowire omega-FinFETs

The low-frequency noise (LFN) characteristics of AlGaN/GaN FinFETs with omega-gate and combined two-dimensional electron gas (2DEG) and MOS conduction are investigated. It is found that LFN is dominated by carrier number fluctuations whatever the width of the fin. Charge trapping in narrow devices is one order of magnitude lower than in wide fin device. In narrow devices, the sidewall conduction prevails and the noise mainly stems from the carrier trapping in the sidewall Al₂O₃ gate dielectric. Instead, in wide fin devices, the top gate AlGaN/GaN HEMT structure dominates and the LFN is mostly governed by the carrier trapping in the GaN layer close to 2DEG channel.