30 nm E-mode InAs PHEMTs for THz and future logic applications

We have demonstrated 30 nm E-mode InAs PHEMTs with outstanding Tera-Hz (THz) and logic performance. The devices feature a Pt gate sinking process to effectively thin down the In_0.52Al₀₄₈As barrier layer. Fabricated devices show excellent Lg scalability down to 30 nm with record fT in E- mode devices, and record combination of fT and fmax in any transistor technology. In particular, 30 nm devices exhibit V_T=80 mV, g _m,max=1.83 mS/μm, S = 73 mV/dec, DIBL = 85 mV/V, f_T=601 and f_max=609 GHz at V_DS=0.5 V. We have also estimated a source injection velocity of v_inj=2.5 x 10⁷ cm/s at V _DS=0.5 V, about a factor of two higher than state-of- the-art Si MOSFETs These encouraging results stem from the outstanding transport properties of InAs as a channel material coupled with well-tempered design features that improve short- channel effects through insulator thickness scaling with buried Pt-gate.