30-nm InAs PHEMTs with fT = 644 GHz and fmax = 681 GHz

Dae Hyun Kim; Jess A. Del Alamo

doi:10.1109/LED.2010.2051133

30-nm InAs PHEMTs with fT = 644 GHz and f_max = 681 GHz

Dae Hyun Kim
, Jess A. Del Alamo

School of Electronics Engineering

Massachusetts Institute of Technology

Research output: Contribution to journal › Article › peer-review

159 Scopus citations

Abstract

We present 30-nm InAs pseudomorphic HEMTs (PHEMTs) on an InP substrate with record f_T characteristics and well-balanced f_T and f _max values. This result was obtained by improving short-channel effects through widening of the side-recess spacing (L_side) to 150 nm, as well as reducing parasitic source and drain resistances. To compensate for an increase in R_s and R_d due to L_side widening, we optimized the ohmic contact process so as to decrease the specific ohmic contact resistance (R_c) to the InGaAs cap to 0.01 Ωmm. A 30-nm InAs PHEMT with t_ins4 exhibits excellent gm_max of 1.9 S/mm, f_T of 644 GHz, and f_max of 681 GHz at V _DS0.5V simultaneously. To the knowledge of the authors, the obtained f_T in this work is the highest ever reported in any FET on any material system. This is also the first demonstration of simultaneous f _T and f_max higher than 640 GHz in any transistor technology.

Original language	English
Article number	5508349
Pages (from-to)	806-808
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	8
DOIs	https://doi.org/10.1109/LED.2010.2051133
State	Published - Aug 2010

Keywords

Cutoff frequency (f)
InAs
maximum oscillation frequency (f )
pseudomorphic HEMTs (PHEMTs)
short-channel effects
side-recess spacing (L)

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10.1109/LED.2010.2051133

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title = "30-nm InAs PHEMTs with fT = 644 GHz and fmax = 681 GHz",

abstract = "We present 30-nm InAs pseudomorphic HEMTs (PHEMTs) on an InP substrate with record fT characteristics and well-balanced fT and f max values. This result was obtained by improving short-channel effects through widening of the side-recess spacing (Lside) to 150 nm, as well as reducing parasitic source and drain resistances. To compensate for an increase in Rs and Rd due to Lside widening, we optimized the ohmic contact process so as to decrease the specific ohmic contact resistance (Rc) to the InGaAs cap to 0.01 Ωmm. A 30-nm InAs PHEMT with tins4 exhibits excellent gmmax of 1.9 S/mm, fT of 644 GHz, and fmax of 681 GHz at V DS0.5V simultaneously. To the knowledge of the authors, the obtained fT in this work is the highest ever reported in any FET on any material system. This is also the first demonstration of simultaneous f T and fmax higher than 640 GHz in any transistor technology.",

keywords = "Cutoff frequency (f), InAs, maximum oscillation frequency (f ), pseudomorphic HEMTs (PHEMTs), short-channel effects, side-recess spacing (L)",

author = "Kim, \{Dae Hyun\} and \{Del Alamo\}, \{Jess A.\}",

year = "2010",

month = aug,

doi = "10.1109/LED.2010.2051133",

language = "English",

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T1 - 30-nm InAs PHEMTs with fT = 644 GHz and fmax = 681 GHz

AU - Kim, Dae Hyun

AU - Del Alamo, Jess A.

PY - 2010/8

Y1 - 2010/8

N2 - We present 30-nm InAs pseudomorphic HEMTs (PHEMTs) on an InP substrate with record fT characteristics and well-balanced fT and f max values. This result was obtained by improving short-channel effects through widening of the side-recess spacing (Lside) to 150 nm, as well as reducing parasitic source and drain resistances. To compensate for an increase in Rs and Rd due to Lside widening, we optimized the ohmic contact process so as to decrease the specific ohmic contact resistance (Rc) to the InGaAs cap to 0.01 Ωmm. A 30-nm InAs PHEMT with tins4 exhibits excellent gmmax of 1.9 S/mm, fT of 644 GHz, and fmax of 681 GHz at V DS0.5V simultaneously. To the knowledge of the authors, the obtained fT in this work is the highest ever reported in any FET on any material system. This is also the first demonstration of simultaneous f T and fmax higher than 640 GHz in any transistor technology.

AB - We present 30-nm InAs pseudomorphic HEMTs (PHEMTs) on an InP substrate with record fT characteristics and well-balanced fT and f max values. This result was obtained by improving short-channel effects through widening of the side-recess spacing (Lside) to 150 nm, as well as reducing parasitic source and drain resistances. To compensate for an increase in Rs and Rd due to Lside widening, we optimized the ohmic contact process so as to decrease the specific ohmic contact resistance (Rc) to the InGaAs cap to 0.01 Ωmm. A 30-nm InAs PHEMT with tins4 exhibits excellent gmmax of 1.9 S/mm, fT of 644 GHz, and fmax of 681 GHz at V DS0.5V simultaneously. To the knowledge of the authors, the obtained fT in this work is the highest ever reported in any FET on any material system. This is also the first demonstration of simultaneous f T and fmax higher than 640 GHz in any transistor technology.

KW - Cutoff frequency (f)

KW - InAs

KW - maximum oscillation frequency (f )

KW - pseudomorphic HEMTs (PHEMTs)

KW - short-channel effects

KW - side-recess spacing (L)

UR - https://www.scopus.com/pages/publications/77955172642

U2 - 10.1109/LED.2010.2051133

DO - 10.1109/LED.2010.2051133

M3 - Article

AN - SCOPUS:77955172642

SN - 0741-3106

VL - 31

SP - 806

EP - 808

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 8

M1 - 5508349

ER -

30-nm InAs PHEMTs with fT = 644 GHz and f_max = 681 GHz

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Keywords

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