30 nm In0.7Ga0.3as inverted-type HEMTs with reduced gate leakage current for logic applications

Tae Woo Kim; Dae Hyun Kim; Jesus A. Del Alamo

doi:10.1109/IEDM.2009.5424317

30 nm In_0.7Ga_0.3as inverted-type HEMTs with reduced gate leakage current for logic applications

Tae Woo Kim, Dae Hyun Kim, Jesus A. Del Alamo

School of Electronics Engineering

Massachusetts Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

16 Scopus citations

Abstract

We have fabricated 30 nm In_0.7Ga_0.3As Inverted-Type HEMTs with outstanding logic performance, scalability andhigh frequency characteristics. The motivation for this work is the demonstration of reduced gate leakage current in the Inverted HEMT structure. The fabricated devices show excellent L_g scalability down to 30 nm. L_g = 30 nm devices have been fabricated with exhibit g_m = 1.27 mS/μm, S = 83 mV/dec, DIBL = 118 mV/V, I_ON/I_OFF = 4 x 10⁴, all at 0.5 V. More significantly, the removal of dopants from the barrier suppresses forward gate leakage current by over 100X when compared with equivalent normal HEMTs. The L_g = 30 nm devices also feature record high-frequency characteristics for an inverted-type HEMT design with f _T = 500 GHz and f_max = 550 GHz.

Original language	English
Title of host publication	2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
Pages	20.1.1-20.1.4
DOIs	https://doi.org/10.1109/IEDM.2009.5424317
State	Published - 2009
Event	2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States Duration: 7 Dec 2009 → 9 Dec 2009

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2009 International Electron Devices Meeting, IEDM 2009
Country/Territory	United States
City	Baltimore, MD
Period	7/12/09 → 9/12/09

Access to Document

10.1109/IEDM.2009.5424317

Cite this

Kim, T. W., Kim, D. H., & Del Alamo, J. A. (2009). 30 nm In_0.7Ga_0.3as inverted-type HEMTs with reduced gate leakage current for logic applications. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest (pp. 20.1.1-20.1.4). Article 5424317 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2009.5424317

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title = "30 nm In0.7Ga0.3as inverted-type HEMTs with reduced gate leakage current for logic applications",

abstract = "We have fabricated 30 nm In0.7Ga0.3As Inverted-Type HEMTs with outstanding logic performance, scalability andhigh frequency characteristics. The motivation for this work is the demonstration of reduced gate leakage current in the Inverted HEMT structure. The fabricated devices show excellent Lg scalability down to 30 nm. Lg = 30 nm devices have been fabricated with exhibit gm = 1.27 mS/μm, S = 83 mV/dec, DIBL = 118 mV/V, ION/IOFF = 4 x 104, all at 0.5 V. More significantly, the removal of dopants from the barrier suppresses forward gate leakage current by over 100X when compared with equivalent normal HEMTs. The Lg = 30 nm devices also feature record high-frequency characteristics for an inverted-type HEMT design with f T = 500 GHz and fmax = 550 GHz.",

author = "Kim, {Tae Woo} and Kim, {Dae Hyun} and {Del Alamo}, {Jesus A.}",

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Kim, TW, Kim, DH & Del Alamo, JA 2009, 30 nm In_0.7Ga_0.3as inverted-type HEMTs with reduced gate leakage current for logic applications. in 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest., 5424317, Technical Digest - International Electron Devices Meeting, IEDM, pp. 20.1.1-20.1.4, 2009 International Electron Devices Meeting, IEDM 2009, Baltimore, MD, United States, 7/12/09. https://doi.org/10.1109/IEDM.2009.5424317

30 nm In_0.7Ga_0.3as inverted-type HEMTs with reduced gate leakage current for logic applications. / Kim, Tae Woo; Kim, Dae Hyun; Del Alamo, Jesus A.
2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. p. 20.1.1-20.1.4 5424317 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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