3.3-V 4-Mb nonvolatile ferroelectric RAM with a selectively-driven double-pulsed plate read/write-back scheme

Yeonbae Chung, Mun Kyu Choi, Seung Kyu Oh, Byung Gil Jeon, Kang Deog Suh

Research output: Contribution to conference › Paper › peer-review

13 Scopus citations

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