@inproceedings{3c149621286148ed9d47c5db9dd79165,
title = "384 nm AlGaN diode lasers on relaxed semipolar buffers",
abstract = "We Report Operation Of Algan Laser Diodes Grown On Semipolar Buffer Layers Partially Relaxed By Misfit Dislocation Formation At Heterointerfaces Remote From The Active Region. This Approach Offers A Pathway To Mid-Uv Algan Based Lasers.",
author = "Haeger, {D. A.} and Young, {E. C.} and Chung, {R. B.} and F. Wu and Romanov, {A. E.} and S. Nakamura and DenBaars, {S. P.} and Speck, {J. S.} and Cohen, {D. A.}",
year = "2012",
doi = "10.1364/cleo_si.2012.ctu2n.4",
language = "English",
isbn = "9781557529435",
series = "CLEO: Science and Innovations, CLEO_SI 2012",
publisher = "Optical Society of America (OSA)",
pages = "CTu2N.4",
booktitle = "CLEO",
note = "CLEO: Science and Innovations, CLEO_SI 2012 ; Conference date: 06-05-2012 Through 11-05-2012",
}