@inproceedings{2687f0fd359a478ea79d3fa9dbdb9de2,
title = "384 nm AlGaN diode lasers on relaxed semipolar buffers",
abstract = "We report operation of AlGaN laser diodes grown on semipolar buffer layers partially relaxed by misfit dislocation formation at heterointerfaces remote from the active region. This approach offers a pathway to mid-UV AlGaN based lasers.",
author = "Haeger, {D. A.} and Young, {E. C.} and Chung, {R. B.} and F. Wu and Romanov, {A. E.} and S. Nakamura and Denbaars, {S. P.} and Speck, {J. S.} and Cohen, {D. A.}",
year = "2012",
language = "English",
isbn = "9781467318396",
series = "2012 Conference on Lasers and Electro-Optics, CLEO 2012",
booktitle = "2012 Conference on Lasers and Electro-Optics, CLEO 2012",
note = "2012 Conference on Lasers and Electro-Optics, CLEO 2012 ; Conference date: 06-05-2012 Through 11-05-2012",
}