384 nm laser diode grown on a (202̄1) semipolar relaxed AlGaN buffer layer

Daniel A. Haeger; Erin C. Young; Roy B. Chung; Feng Wu; Nathan A. Pfaff; Min Tsai; Kenji Fujito; Steven P. Denbaars; James S. Speck; Shuji Nakamura; Daniel A. Cohen

doi:10.1063/1.4704560

384 nm laser diode grown on a (202̄1) semipolar relaxed AlGaN buffer layer

Daniel A. Haeger, Erin C. Young, Roy B. Chung, Feng Wu, Nathan A. Pfaff, Min Tsai, Kenji Fujito, Steven P. Denbaars, James S. Speck, Shuji Nakamura, Daniel A. Cohen

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33 Scopus citations

Abstract

We demonstrate an electrically injected semipolar (202̄1) laser diode grown on a partially relaxed AlGaN buffer layer. The coherency stresses are relaxed by misfit dislocations at the GaN/AlGaN heterointerface which form by glide of preexisting threading dislocations along the (0001) basal plane. The defects are confined to the heterointerface which allows the growth of high aluminum composition films with threading dislocation densities of less than 10 ⁸cm ^-2. The lasing wavelength was 384 nm with a threshold current density of 15.7 kA/cm ^-2. UV lasers grown on semipolar relaxed AlGaN buffers provide an alternative to devices grown on AlN or sapphire.

Original language	English
Article number	161107
Journal	Applied Physics Letters
Volume	100
Issue number	16
DOIs	https://doi.org/10.1063/1.4704560
State	Published - 16 Apr 2012

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abstract = "We demonstrate an electrically injected semipolar (20{\=2}1) laser diode grown on a partially relaxed AlGaN buffer layer. The coherency stresses are relaxed by misfit dislocations at the GaN/AlGaN heterointerface which form by glide of preexisting threading dislocations along the (0001) basal plane. The defects are confined to the heterointerface which allows the growth of high aluminum composition films with threading dislocation densities of less than 10 8cm -2. The lasing wavelength was 384 nm with a threshold current density of 15.7 kA/cm -2. UV lasers grown on semipolar relaxed AlGaN buffers provide an alternative to devices grown on AlN or sapphire.",

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T1 - 384 nm laser diode grown on a (202̄1) semipolar relaxed AlGaN buffer layer

AU - Haeger, Daniel A.

AU - Young, Erin C.

AU - Chung, Roy B.

AU - Wu, Feng

AU - Pfaff, Nathan A.

AU - Tsai, Min

AU - Fujito, Kenji

AU - Denbaars, Steven P.

AU - Speck, James S.

AU - Nakamura, Shuji

AU - Cohen, Daniel A.

PY - 2012/4/16

Y1 - 2012/4/16

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AB - We demonstrate an electrically injected semipolar (202̄1) laser diode grown on a partially relaxed AlGaN buffer layer. The coherency stresses are relaxed by misfit dislocations at the GaN/AlGaN heterointerface which form by glide of preexisting threading dislocations along the (0001) basal plane. The defects are confined to the heterointerface which allows the growth of high aluminum composition films with threading dislocation densities of less than 10 8cm -2. The lasing wavelength was 384 nm with a threshold current density of 15.7 kA/cm -2. UV lasers grown on semipolar relaxed AlGaN buffers provide an alternative to devices grown on AlN or sapphire.

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384 nm laser diode grown on a (202̄1) semipolar relaxed AlGaN buffer layer

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