384 nm laser diode grown on a (202̄1) semipolar relaxed AlGaN buffer layer

Daniel A. Haeger, Erin C. Young, Roy B. Chung, Feng Wu, Nathan A. Pfaff, Min Tsai, Kenji Fujito, Steven P. Denbaars, James S. Speck, Shuji Nakamura, Daniel A. Cohen

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