60 GHz harmonic optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor on a GaAs substrate

Chang Soon Choi; Hyo Soon Kang; Dae Hyun Kim; Kwang Seok Seo; Woo Young Choi

doi:10.1143/jjap.42.l658

60 GHz harmonic optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor on a GaAs substrate

Chang Soon Choi, Hyo Soon Kang, Dae Hyun Kim, Kwang Seok Seo, Woo Young Choi

Research output: Contribution to journal › Article › peer-review

Abstract

This letter reports the demonstration of 60 GHz harmonic optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a GaAs substrate. Using 10 GHz or 30 GHz local oscillator signals, we successfully up-convert optically transmitted 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing efficiencies on the bias conditions of the HEMT, we determine the optimum bias conditions for maximizing harmonic optoelectronic up-conversion efficiency.

Original language	English
Pages (from-to)	L658-L659
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	42
Issue number	6 B
DOIs	https://doi.org/10.1143/jjap.42.l658
State	Published - 15 Jun 2003

Keywords

Metamorphic HEMT
Millimeter-wave
Optoelectronic mixer
Photodetector
Radio-on-fiber systems

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10.1143/jjap.42.l658

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title = "60 GHz harmonic optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor on a GaAs substrate",

abstract = "This letter reports the demonstration of 60 GHz harmonic optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a GaAs substrate. Using 10 GHz or 30 GHz local oscillator signals, we successfully up-convert optically transmitted 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing efficiencies on the bias conditions of the HEMT, we determine the optimum bias conditions for maximizing harmonic optoelectronic up-conversion efficiency.",

keywords = "Metamorphic HEMT, Millimeter-wave, Optoelectronic mixer, Photodetector, Radio-on-fiber systems",

author = "Choi, {Chang Soon} and Kang, {Hyo Soon} and Kim, {Dae Hyun} and Seo, {Kwang Seok} and Choi, {Woo Young}",

year = "2003",

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doi = "10.1143/jjap.42.l658",

language = "English",

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journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

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}

60 GHz harmonic optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor on a GaAs substrate. / Choi, Chang Soon; Kang, Hyo Soon; Kim, Dae Hyun et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 6 B, 15.06.2003, p. L658-L659.

Research output: Contribution to journal › Article › peer-review

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T1 - 60 GHz harmonic optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor on a GaAs substrate

AU - Choi, Chang Soon

AU - Kang, Hyo Soon

AU - Kim, Dae Hyun

AU - Seo, Kwang Seok

AU - Choi, Woo Young

PY - 2003/6/15

Y1 - 2003/6/15

N2 - This letter reports the demonstration of 60 GHz harmonic optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a GaAs substrate. Using 10 GHz or 30 GHz local oscillator signals, we successfully up-convert optically transmitted 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing efficiencies on the bias conditions of the HEMT, we determine the optimum bias conditions for maximizing harmonic optoelectronic up-conversion efficiency.

AB - This letter reports the demonstration of 60 GHz harmonic optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a GaAs substrate. Using 10 GHz or 30 GHz local oscillator signals, we successfully up-convert optically transmitted 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing efficiencies on the bias conditions of the HEMT, we determine the optimum bias conditions for maximizing harmonic optoelectronic up-conversion efficiency.

KW - Metamorphic HEMT

KW - Millimeter-wave

KW - Optoelectronic mixer

KW - Photodetector

KW - Radio-on-fiber systems

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

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IS - 6 B

ER -

60 GHz harmonic optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor on a GaAs substrate

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