@inproceedings{43e3ebc5718d4112842ffff51b45b664,
title = "60 nm self-aligned-gate InGaAs HEMTs with record high-frequency characteristics",
abstract = "We have developed a new self-aligned gate technology for InGaAs High Electron Mobility Transistors with non-alloyed Mo-based ohmic contacts and a very low parasitic capacitance gate design. The new process delivers a contact resistance of 7 Ohm-μm and a source resistance of 147 Ohm-μm. The non-alloyed Mo-based ohmic contacts show excellent thermal stability up to 600 °C. Using this technology, we have demonstrated a 60 nm gate length self-aligned InGaAs HEMT with gm = 2.1 mS/μm at VDS = 0.5 V, and fT = 580 GHz and fmax = 675 GHz at V DS = 0.6 V. These are all record or near record values for this gate length.",
author = "Kim, {Tae Woo} and Kim, {Dae Hyun} and {Del Alamo}, {Jes{\'u}s A.}",
year = "2010",
doi = "10.1109/IEDM.2010.5703454",
language = "English",
isbn = "9781424474196",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
pages = "30.7.1--30.7.4",
booktitle = "2010 IEEE International Electron Devices Meeting, IEDM 2010",
note = "2010 IEEE International Electron Devices Meeting, IEDM 2010 ; Conference date: 06-12-2010 Through 08-12-2010",
}