780nm oxidised vertical-cavity surface-emitting lasers with Al0.11Ga0.89As quantum wells

H. E. Shin, Y. G. Ju, J. H. Shin, J. H. Ser, T. Kim, E. K. Lee, I. Kim, Y. H. Lee

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

Low threshold vertical-cavity surface-emitting lasers with Al0.11Ga0.89As four quantum wells for 780nm wavelength emission are fabricated using aluminum oxide apertures. The fabrication process requires only single step mask alignment. The 3.4μm square laser exhibits a low threshold current of 200μA, which is more than an order of magnitude smaller than the previous values obtained at 780nm. Singlemode peak output power is 1.1mW. This 3.4μm laser is found to operate in the fundamental transverse mode over the complete operating current range. The 7.6μm square laser shows peak output power of 2.7mW.

Original languageEnglish
Pages (from-to)1287-1288
Number of pages2
JournalElectronics Letters
Volume32
Issue number14
DOIs
StatePublished - 4 Jul 1996

Keywords

  • Oxidation
  • Semiconductor junction lasers

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