Abstract
Low threshold vertical-cavity surface-emitting lasers with Al0.11Ga0.89As four quantum wells for 780nm wavelength emission are fabricated using aluminum oxide apertures. The fabrication process requires only single step mask alignment. The 3.4μm square laser exhibits a low threshold current of 200μA, which is more than an order of magnitude smaller than the previous values obtained at 780nm. Singlemode peak output power is 1.1mW. This 3.4μm laser is found to operate in the fundamental transverse mode over the complete operating current range. The 7.6μm square laser shows peak output power of 2.7mW.
Original language | English |
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Pages (from-to) | 1287-1288 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 32 |
Issue number | 14 |
DOIs | |
State | Published - 4 Jul 1996 |
Keywords
- Oxidation
- Semiconductor junction lasers