90 nm self-aligned enhancement-mode InGaAs HEMT for logic applications

Niamh Waldron; Dae Hyun Kim; Jesús A. Del Alamo

doi:10.1109/IEDM.2007.4419019

90 nm self-aligned enhancement-mode InGaAs HEMT for logic applications

Niamh Waldron, Dae Hyun Kim, Jesús A. Del Alamo

School of Electronics Engineering

Massachusetts Institute of Technology

Research output: Contribution to journal › Conference article › peer-review

33 Scopus citations

Abstract

We have demonstrated 90 nm self-aligned enhancement mode InGaAs HEMTs with outstanding logic figures of merit. The gate-source ohmic separation was reduced to 60 nm, a 20x reduction over conventional designs. Devices in which the barrier was thinned to 5 nm by means of a dry etch had a V_T of 60 mV, g_m of 1.3 mS/μm, DIBL of 55 mV/V and a SS of 70 mV/dec.

Original language	English
Article number	4419019
Pages (from-to)	633-636
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.2007.4419019
State	Published - 2007
Event	2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States Duration: 10 Dec 2007 → 12 Dec 2007

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title = "90 nm self-aligned enhancement-mode InGaAs HEMT for logic applications",

abstract = "We have demonstrated 90 nm self-aligned enhancement mode InGaAs HEMTs with outstanding logic figures of merit. The gate-source ohmic separation was reduced to 60 nm, a 20x reduction over conventional designs. Devices in which the barrier was thinned to 5 nm by means of a dry etch had a VT of 60 mV, gm of 1.3 mS/μm, DIBL of 55 mV/V and a SS of 70 mV/dec.",

author = "Niamh Waldron and Kim, {Dae Hyun} and {Del Alamo}, {Jes{\'u}s A.}",

year = "2007",

doi = "10.1109/IEDM.2007.4419019",

language = "English",

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journal = "Technical Digest - International Electron Devices Meeting",

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note = "2007 IEEE International Electron Devices Meeting, IEDM ; Conference date: 10-12-2007 Through 12-12-2007",

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AU - Waldron, Niamh

AU - Kim, Dae Hyun

AU - Del Alamo, Jesús A.

PY - 2007

Y1 - 2007

N2 - We have demonstrated 90 nm self-aligned enhancement mode InGaAs HEMTs with outstanding logic figures of merit. The gate-source ohmic separation was reduced to 60 nm, a 20x reduction over conventional designs. Devices in which the barrier was thinned to 5 nm by means of a dry etch had a VT of 60 mV, gm of 1.3 mS/μm, DIBL of 55 mV/V and a SS of 70 mV/dec.

AB - We have demonstrated 90 nm self-aligned enhancement mode InGaAs HEMTs with outstanding logic figures of merit. The gate-source ohmic separation was reduced to 60 nm, a 20x reduction over conventional designs. Devices in which the barrier was thinned to 5 nm by means of a dry etch had a VT of 60 mV, gm of 1.3 mS/μm, DIBL of 55 mV/V and a SS of 70 mV/dec.

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U2 - 10.1109/IEDM.2007.4419019

DO - 10.1109/IEDM.2007.4419019

M3 - Conference article

AN - SCOPUS:50249120643

SN - 0163-1918

SP - 633

EP - 636

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

M1 - 4419019

T2 - 2007 IEEE International Electron Devices Meeting, IEDM

Y2 - 10 December 2007 through 12 December 2007

ER -

90 nm self-aligned enhancement-mode InGaAs HEMT for logic applications

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