90 nm self-aligned enhancement-mode InGaAs HEMT for logic applications

Niamh Waldron, Dae Hyun Kim, Jesús A. Del Alamo

Research output: Contribution to journalConference articlepeer-review

33 Scopus citations

Abstract

We have demonstrated 90 nm self-aligned enhancement mode InGaAs HEMTs with outstanding logic figures of merit. The gate-source ohmic separation was reduced to 60 nm, a 20x reduction over conventional designs. Devices in which the barrier was thinned to 5 nm by means of a dry etch had a VT of 60 mV, gm of 1.3 mS/μm, DIBL of 55 mV/V and a SS of 70 mV/dec.

Original languageEnglish
Article number4419019
Pages (from-to)633-636
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 2007
Event2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States
Duration: 10 Dec 200712 Dec 2007

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