@inproceedings{bc2d07124bc44246bf6e543605bdbbec,
title = "A 0.1-14 GHz wideband SiGe BiFET power amplifier",
abstract = "In this paper, a wide bandwidth power amplifier, employing a MOS-HBT-HBT (BiFET) cascode as the unit section of distributed amplifier to provide improved output power as well as bandwidth, is designed. A four section distributed amplifier delivers a maximum output power of 22.8 dBm at 13 dBm input power, with -3 dB bandwidth of 13.9 GHz (0.1-14 GHz). The bandwidth and RF power achieved from this amplifier demonstrate that SiGe BiFET wideband power amplifiers have the potential to offer high performance for System-on-a-Chip (SoC) integration.",
keywords = "BiFET, Power amplifier, SiGe BiCMOS, Wideband",
author = "Jonghoo Park and Pingxi Ma and Marco Racanelli and Zhenqiang Ma",
year = "2006",
doi = "10.1109/SMIC.2005.1587932",
language = "English",
isbn = "0780394720",
series = "2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers",
pages = "159--162",
booktitle = "2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers",
note = "2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems ; Conference date: 18-01-2006 Through 20-01-2006",
}