A 112-GS/s 1-to-4 ADC front-end with more than 35-dBc SFDR and 28-dB SNDR up to 43-GHz in 130-nm SiGe BiCMOS

X. Q. Du; M. Grozing; A. Uhl; S. Park; F. Buchali; K. Schuh; S. T. Le; M. Berroth

doi:10.1109/RFIC.2019.8701786

A 112-GS/s 1-to-4 ADC front-end with more than 35-dBc SFDR and 28-dB SNDR up to 43-GHz in 130-nm SiGe BiCMOS

X. Q. Du
, M. Grozing
, A. Uhl
, S. Park
, F. Buchali
, K. Schuh
, S. T. Le
, M. Berroth

School of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

21 Scopus citations

Abstract

A 112 GS/s 1-to-4 ADC front-end in IHP 130 nm SiGe BiCMOS based on charge sampling is presented. In experimental tests, the ADC front-end achieves more than 35 dBc SFDR and more than 28 dB SNDR up to 43 GHz. Furthermore, sampling of 100 Gbaud (=200 Gb/s) PAM-4 signals with an EVM of 11.3% for 400k received symbols is demonstrated.

Original language	English
Title of host publication	2019 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	215-218
Number of pages	4
ISBN (Electronic)	9781728117010
DOIs	https://doi.org/10.1109/RFIC.2019.8701786
State	Published - Jun 2019
Event	2019 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2019 - Boston, United States Duration: 2 Jun 2019 → 4 Jun 2019

Publication series

Name	Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
Volume	2019-June
ISSN (Print)	1529-2517

Conference

Conference	2019 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2019
Country/Territory	United States
City	Boston
Period	2/06/19 → 4/06/19

Keywords

Charge sampling
analog-to-digital converter (ADC)
pulse amplitude modulation (PAM)

Access to Document

10.1109/RFIC.2019.8701786

Cite this

Du, X. Q., Grozing, M., Uhl, A., Park, S., Buchali, F., Schuh, K., Le, S. T., & Berroth, M. (2019). A 112-GS/s 1-to-4 ADC front-end with more than 35-dBc SFDR and 28-dB SNDR up to 43-GHz in 130-nm SiGe BiCMOS. In 2019 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2019 (pp. 215-218). Article 8701786 (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium; Vol. 2019-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIC.2019.8701786

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title = "A 112-GS/s 1-to-4 ADC front-end with more than 35-dBc SFDR and 28-dB SNDR up to 43-GHz in 130-nm SiGe BiCMOS",

abstract = "A 112 GS/s 1-to-4 ADC front-end in IHP 130 nm SiGe BiCMOS based on charge sampling is presented. In experimental tests, the ADC front-end achieves more than 35 dBc SFDR and more than 28 dB SNDR up to 43 GHz. Furthermore, sampling of 100 Gbaud (=200 Gb/s) PAM-4 signals with an EVM of 11.3\% for 400k received symbols is demonstrated.",

keywords = "Charge sampling, analog-to-digital converter (ADC), pulse amplitude modulation (PAM)",

author = "Du, \{X. Q.\} and M. Grozing and A. Uhl and S. Park and F. Buchali and K. Schuh and Le, \{S. T.\} and M. Berroth",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2019 ; Conference date: 02-06-2019 Through 04-06-2019",

year = "2019",

month = jun,

doi = "10.1109/RFIC.2019.8701786",

language = "English",

series = "Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "215--218",

booktitle = "2019 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2019",

address = "United States",

}

Du, XQ, Grozing, M, Uhl, A, Park, S, Buchali, F, Schuh, K, Le, ST & Berroth, M 2019, A 112-GS/s 1-to-4 ADC front-end with more than 35-dBc SFDR and 28-dB SNDR up to 43-GHz in 130-nm SiGe BiCMOS. in 2019 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2019., 8701786, Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium, vol. 2019-June, Institute of Electrical and Electronics Engineers Inc., pp. 215-218, 2019 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2019, Boston, United States, 2/06/19. https://doi.org/10.1109/RFIC.2019.8701786

A 112-GS/s 1-to-4 ADC front-end with more than 35-dBc SFDR and 28-dB SNDR up to 43-GHz in 130-nm SiGe BiCMOS. / Du, X. Q.; Grozing, M.; Uhl, A. et al.
2019 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 215-218 8701786 (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium; Vol. 2019-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Du XQ, Grozing M, Uhl A, Park S, Buchali F, Schuh K et al. A 112-GS/s 1-to-4 ADC front-end with more than 35-dBc SFDR and 28-dB SNDR up to 43-GHz in 130-nm SiGe BiCMOS. In 2019 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 215-218. 8701786. (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium). doi: 10.1109/RFIC.2019.8701786

A 112-GS/s 1-to-4 ADC front-end with more than 35-dBc SFDR and 28-dB SNDR up to 43-GHz in 130-nm SiGe BiCMOS

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Keywords

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