A 15 GHz CMOS RF switch employing large-signal impedance matching

Jonghoo Park; Zhenqiang Ma

doi:10.1109/SMIC.2005.1587939

A 15 GHz CMOS RF switch employing large-signal impedance matching

Jonghoo Park, Zhenqiang Ma

Department of Electrical Engineering

University of Wisconsin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

Employing large-signal impedance matching for the transmit node and conjugate matching for the receive node, a 15 GHz CMOS switch with high power handling is designed. With the design techniques, the P_-1dB in the transmit mode and the transducer power gain in the receive mode at high frequencies have been significantly improved. The switch exhibits P _-1dB of 23.6 dBm and 14.0 dBm, insertion loss of 2.08 dB and 3.67 dB, and isolation of 19.5 dB and 14.4 dB at 15 GHz in the transmit and receive modes, respectively. The results achieved from this design demonstrate that T/R switches with high P_-1dB, low insertion loss, and high isolation at high frequency that are comparable to III-V counterparts can be realized with CMOS for high level integration.

Original language	English
Title of host publication	2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers
Pages	186-189
Number of pages	4
DOIs	https://doi.org/10.1109/SMIC.2005.1587939
State	Published - 2006
Event	2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - San Diego, CA, United States Duration: 18 Jan 2006 → 20 Jan 2006

Publication series

Name	2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers
Volume	2006

Conference

Conference	2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Country/Territory	United States
City	San Diego, CA
Period	18/01/06 → 20/01/06

Keywords

CMOS
Insertion loss (IL)
Isolation
Large-signal impedance matching
P
Return loss
RF switch. return loss

Access to Document

10.1109/SMIC.2005.1587939

Cite this

Park, J., & Ma, Z. (2006). A 15 GHz CMOS RF switch employing large-signal impedance matching. In 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers (pp. 186-189). Article 1587939 (2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers; Vol. 2006). https://doi.org/10.1109/SMIC.2005.1587939

@inproceedings{627c81bbd29e4ac5bf4b3e5d33da2cea,

title = "A 15 GHz CMOS RF switch employing large-signal impedance matching",

abstract = "Employing large-signal impedance matching for the transmit node and conjugate matching for the receive node, a 15 GHz CMOS switch with high power handling is designed. With the design techniques, the P-1dB in the transmit mode and the transducer power gain in the receive mode at high frequencies have been significantly improved. The switch exhibits P -1dB of 23.6 dBm and 14.0 dBm, insertion loss of 2.08 dB and 3.67 dB, and isolation of 19.5 dB and 14.4 dB at 15 GHz in the transmit and receive modes, respectively. The results achieved from this design demonstrate that T/R switches with high P-1dB, low insertion loss, and high isolation at high frequency that are comparable to III-V counterparts can be realized with CMOS for high level integration.",

keywords = "CMOS, Insertion loss (IL), Isolation, Large-signal impedance matching, P, Return loss, RF switch. return loss",

author = "Jonghoo Park and Zhenqiang Ma",

year = "2006",

doi = "10.1109/SMIC.2005.1587939",

language = "English",

isbn = "0780394720",

series = "2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers",

pages = "186--189",

booktitle = "2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers",

note = "2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems ; Conference date: 18-01-2006 Through 20-01-2006",

}

Park, J & Ma, Z 2006, A 15 GHz CMOS RF switch employing large-signal impedance matching. in 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers., 1587939, 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers, vol. 2006, pp. 186-189, 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, San Diego, CA, United States, 18/01/06. https://doi.org/10.1109/SMIC.2005.1587939

A 15 GHz CMOS RF switch employing large-signal impedance matching. / Park, Jonghoo; Ma, Zhenqiang.
2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers. 2006. p. 186-189 1587939 (2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers; Vol. 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A 15 GHz CMOS RF switch employing large-signal impedance matching

AU - Park, Jonghoo

AU - Ma, Zhenqiang

PY - 2006

Y1 - 2006

N2 - Employing large-signal impedance matching for the transmit node and conjugate matching for the receive node, a 15 GHz CMOS switch with high power handling is designed. With the design techniques, the P-1dB in the transmit mode and the transducer power gain in the receive mode at high frequencies have been significantly improved. The switch exhibits P -1dB of 23.6 dBm and 14.0 dBm, insertion loss of 2.08 dB and 3.67 dB, and isolation of 19.5 dB and 14.4 dB at 15 GHz in the transmit and receive modes, respectively. The results achieved from this design demonstrate that T/R switches with high P-1dB, low insertion loss, and high isolation at high frequency that are comparable to III-V counterparts can be realized with CMOS for high level integration.

AB - Employing large-signal impedance matching for the transmit node and conjugate matching for the receive node, a 15 GHz CMOS switch with high power handling is designed. With the design techniques, the P-1dB in the transmit mode and the transducer power gain in the receive mode at high frequencies have been significantly improved. The switch exhibits P -1dB of 23.6 dBm and 14.0 dBm, insertion loss of 2.08 dB and 3.67 dB, and isolation of 19.5 dB and 14.4 dB at 15 GHz in the transmit and receive modes, respectively. The results achieved from this design demonstrate that T/R switches with high P-1dB, low insertion loss, and high isolation at high frequency that are comparable to III-V counterparts can be realized with CMOS for high level integration.

KW - CMOS

KW - Insertion loss (IL)

KW - Isolation

KW - Large-signal impedance matching

KW - P

KW - Return loss

KW - RF switch. return loss

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DO - 10.1109/SMIC.2005.1587939

M3 - Conference contribution

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SN - 0780394720

SN - 9780780394728

T3 - 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers

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BT - 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers

T2 - 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Y2 - 18 January 2006 through 20 January 2006

ER -

A 15 GHz CMOS RF switch employing large-signal impedance matching

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Keywords

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