A 2-Mb 1T1C FeRAM prototype based on PMOS-gating cell structure

This paper proposes a new FeRAM design style based on grounded-plate FMOS-gate (GFPG) cell structure. A GPPG cell consists of a PMOS access transistor and a ferroelectric capacitor. Its plate is grounded. The proposed scheme employs three novel operating methods: 1) VDD precharged bitline, 2) negative-voltage wordline technique and 3) negative-pulse restore. Because this configuration doesn't need the onpitch plate control circuitry, it is effective in realizing cost-effective chip sizes. Implementation, of a 2.5-V, 2-Mb FeRAM prototype design in a 0.5-μm technology shows a cell array efficiency of 57%, an access time of 85 ns and an active current of 12mA, respectively.