TY - GEN
T1 - A 206-294GHz 3-stage amplifier in 35nm InP mHEMT, using a thin-film microstrip environment
AU - Griffith, Zach
AU - Ha, Wonill
AU - Chen, Peter
AU - Kim, Dae Hyun
AU - Brar, Bobby
PY - 2010
Y1 - 2010
N2 - We present a compact, 3-stage millimeter-wave monolithic integrated circuit (MMIC) amplifier with an operating frequency of 206-294 GHz, formed by commonsource configured 35 nm Lg InP mHEMTs and a multilayer thin-film microstrip (TFM) wiring environment. The amplifier S21 mid-band gain is 11-16 dB, 3 dB bandwidth at 294 GHz, and 82.5 mW P DC. This is the first reported InP HEMT MMIC operating in G-, H-band employing thinfilm microstrip. Because the TFM ground-plane shields the signal interconnects from the substrate, well behaved device (0.1-67, 140-200,210-310 GHz) and amplifier (206-320 GHz) measurements are presented from an unthinned, 25 mil substrate. The total size of this 3-stage amplifier is only 0.77×O.40 mm2.
AB - We present a compact, 3-stage millimeter-wave monolithic integrated circuit (MMIC) amplifier with an operating frequency of 206-294 GHz, formed by commonsource configured 35 nm Lg InP mHEMTs and a multilayer thin-film microstrip (TFM) wiring environment. The amplifier S21 mid-band gain is 11-16 dB, 3 dB bandwidth at 294 GHz, and 82.5 mW P DC. This is the first reported InP HEMT MMIC operating in G-, H-band employing thinfilm microstrip. Because the TFM ground-plane shields the signal interconnects from the substrate, well behaved device (0.1-67, 140-200,210-310 GHz) and amplifier (206-320 GHz) measurements are presented from an unthinned, 25 mil substrate. The total size of this 3-stage amplifier is only 0.77×O.40 mm2.
KW - E-mode transistor
KW - InP metamorphic high electron mobility transistor (InP mHEMT)
KW - Low-loss dielectric layer
KW - Millimeter Wave
KW - MMIC
KW - Multiple interconnect layers
KW - Thin-film microstrip
UR - http://www.scopus.com/inward/record.url?scp=77957764206&partnerID=8YFLogxK
U2 - 10.1109/MWSYM.2010.5515989
DO - 10.1109/MWSYM.2010.5515989
M3 - Conference contribution
AN - SCOPUS:77957764206
SN - 9781424477326
T3 - IEEE MTT-S International Microwave Symposium Digest
SP - 57
EP - 60
BT - 2010 IEEE MTT-S International Microwave Symposium, MTT 2010
T2 - 2010 IEEE MTT-S International Microwave Symposium, MTT 2010
Y2 - 23 May 2010 through 28 May 2010
ER -