TY - JOUR
T1 - A compact and low-driving-voltage silicon electro-absorption modulator utilizing a Schottky diode operating up to 13.2 GHz in C-band
AU - Jeong, Uiseok
AU - Kim, Kwangwoong
AU - Lee, Kyungwoon
AU - Park, Jung Ho
N1 - Publisher Copyright:
© 2020 The Japan Society of Applied Physics.
PY - 2020/11/9
Y1 - 2020/11/9
N2 - This paper demonstrates a 1 Vpp low-driving-voltage silicon electro-absorption modulator (EAM) utilizing a Schottky diode. Optical modulation using a Schottky diode was achieved through the intensity change of the guiding light due to free-carrier absorption in the semiconductor to change its absorption coefficient, not through conventional interference effects. The proposed EAM consists of a lateral metal-semiconductor junction that helps maximize free-carrier injection and extraction through a Schottky contact on rib waveguide. In order to achieve high-speed operation, traveling-wave type electrodes were designed. The fabricated EAM demonstrates a broad operational wavelength range of 50 nm for C-band with a uniform extinction ratio (ER) of 3.9 dB, even for a compact modulation length of 25 μm with a driving voltage of 1 Vpp. Also, the traveling-wave type electrodes enabled the modulator to operate at up to 26 GHz with 13.2 GHz of 3 dB electro-optic bandwidth experimentally.
AB - This paper demonstrates a 1 Vpp low-driving-voltage silicon electro-absorption modulator (EAM) utilizing a Schottky diode. Optical modulation using a Schottky diode was achieved through the intensity change of the guiding light due to free-carrier absorption in the semiconductor to change its absorption coefficient, not through conventional interference effects. The proposed EAM consists of a lateral metal-semiconductor junction that helps maximize free-carrier injection and extraction through a Schottky contact on rib waveguide. In order to achieve high-speed operation, traveling-wave type electrodes were designed. The fabricated EAM demonstrates a broad operational wavelength range of 50 nm for C-band with a uniform extinction ratio (ER) of 3.9 dB, even for a compact modulation length of 25 μm with a driving voltage of 1 Vpp. Also, the traveling-wave type electrodes enabled the modulator to operate at up to 26 GHz with 13.2 GHz of 3 dB electro-optic bandwidth experimentally.
UR - http://www.scopus.com/inward/record.url?scp=85096315217&partnerID=8YFLogxK
U2 - 10.35848/1347-4065/abc39f
DO - 10.35848/1347-4065/abc39f
M3 - Article
AN - SCOPUS:85096315217
SN - 0021-4922
VL - 59
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
IS - 12
M1 - 122001
ER -