Abstract
A piecewise-linear based behavioral model for ferroelectric capacitors is presented. The model simply consists of two linear capacitors, two diodes and two dc voltage sources. By adjusting empirical parameters to fit the measured hysteresis loops, the model repeats the ferroelectric DC characteristics in accord with the measurements. In addition, the model predicts quite well the transient characteristics of a ferroelectric memory. It is shown, from the standpoint of practical application, that the proposed model is very suitable for use in simulations of the ferroelectric memory circuits.
| Original language | English |
|---|---|
| Pages (from-to) | 131-139 |
| Number of pages | 9 |
| Journal | Integrated Ferroelectrics |
| Volume | 96 |
| Issue number | 1 |
| DOIs | |
| State | Published - 2008 |
Keywords
- Ferroelectric capacitor
- FRAM
- Macro model