A comprehensive investigation of the bias temperature instability associated with charge trapping in In0.7Ga0.3As MOSFETs with various high-κ stacks

Hyuk Min Kwon; Dae Hyun Kim; Tae Woo Kim

doi:10.7567/JJAP.57.100308

A comprehensive investigation of the bias temperature instability associated with charge trapping in In_0.7Ga_0.3As MOSFETs with various high-κ stacks

Hyuk Min Kwon, Dae Hyun Kim, Tae Woo Kim

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Comprehensive bias temperature instability (BTI) reliability for In_0.7Ga_0.3As quantum-well (QW) MOSFETs with different gate stacks were investigated in this paper. The detailed mechanism of ΔV _T degradation in QW In_0.7Ga_0.3As MOSFETs was explored to analyze effective barrier height, near-interface traps and bulk traps in the high-κ layers. The In_0.7Ga_0.3As QW MOSFET with fluorine (F) treatment showed slight improvement in the BTI characteristics, which could be explained by a reduction in the dominant defects by incorporating F atoms into near-interface trap states. This work reveals the necessity of developing a high-quality high-κ gate stack with lower values of D _it and N _BT.

Original language	English
Article number	100308
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	57
Issue number	10
DOIs	https://doi.org/10.7567/JJAP.57.100308
State	Published - Oct 2018

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10.7567/JJAP.57.100308

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title = "A comprehensive investigation of the bias temperature instability associated with charge trapping in In0.7Ga0.3As MOSFETs with various high-κ stacks",

abstract = "Comprehensive bias temperature instability (BTI) reliability for In0.7Ga0.3As quantum-well (QW) MOSFETs with different gate stacks were investigated in this paper. The detailed mechanism of ΔV T degradation in QW In0.7Ga0.3As MOSFETs was explored to analyze effective barrier height, near-interface traps and bulk traps in the high-κ layers. The In0.7Ga0.3As QW MOSFET with fluorine (F) treatment showed slight improvement in the BTI characteristics, which could be explained by a reduction in the dominant defects by incorporating F atoms into near-interface trap states. This work reveals the necessity of developing a high-quality high-κ gate stack with lower values of D it and N BT.",

author = "Kwon, \{Hyuk Min\} and Kim, \{Dae Hyun\} and Kim, \{Tae Woo\}",

note = "Publisher Copyright: {\textcopyright} 2018 The Japan Society of Applied Physics.",

year = "2018",

month = oct,

doi = "10.7567/JJAP.57.100308",

language = "English",

volume = "57",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

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A comprehensive investigation of the bias temperature instability associated with charge trapping in In_0.7Ga_0.3As MOSFETs with various high-κ stacks. / Kwon, Hyuk Min; Kim, Dae Hyun; Kim, Tae Woo.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 57, No. 10, 100308, 10.2018.

Research output: Contribution to journal › Article › peer-review

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PY - 2018/10

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AB - Comprehensive bias temperature instability (BTI) reliability for In0.7Ga0.3As quantum-well (QW) MOSFETs with different gate stacks were investigated in this paper. The detailed mechanism of ΔV T degradation in QW In0.7Ga0.3As MOSFETs was explored to analyze effective barrier height, near-interface traps and bulk traps in the high-κ layers. The In0.7Ga0.3As QW MOSFET with fluorine (F) treatment showed slight improvement in the BTI characteristics, which could be explained by a reduction in the dominant defects by incorporating F atoms into near-interface trap states. This work reveals the necessity of developing a high-quality high-κ gate stack with lower values of D it and N BT.

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A comprehensive investigation of the bias temperature instability associated with charge trapping in In_0.7Ga_0.3As MOSFETs with various high-κ stacks

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