A D-Band 13-mW Dual-Mode CMOS LNA for Joint Radar-Communication in 22-nm FD-SOI CMOS

Shankkar Balasubramanian; Kristof Vaesen; Anirudh Kankuppe; Sehoon Park; Carsten Wulff

doi:10.1109/LSSC.2024.3455889

A D-Band 13-mW Dual-Mode CMOS LNA for Joint Radar-Communication in 22-nm FD-SOI CMOS

Shankkar Balasubramanian
, Kristof Vaesen
, Anirudh Kankuppe
, Sehoon Park
, Carsten Wulff

School of Electronics Engineering

Nordic Semiconductor ASA
Norwegian University of Science and Technology
Interuniversitair Micro-Elektronica Centrum

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

This letter presents a D-band low-noise amplifier (LNA) for joint radar-communication applications in 22-nm CMOS technology. The 4-stage LNA uses transistor switching and bias class changes to achieve dual-mode functionality. In the radar mode, the LNA achieves gain of 17 dB, noise figure (NF) of 7.7 dB, 3-dB bandwidth (BW) of 117-129 GHz, and IP1dB of-20 dBm, respectively. In the communication mode, the LNA achieves gain of 22.6 dB, NF of 8.5 dB, BW of 115.9-128.9 GHz, and IP1dB of-29 dBm, respectively. The power consumption for the radar and communication modes is 13 and 12.2 mW, respectively. The LNA has a core area of 0.06

Original language	English
Pages (from-to)	259-262
Number of pages	4
Journal	IEEE Solid-State Circuits Letters
Volume	7
DOIs	https://doi.org/10.1109/LSSC.2024.3455889
State	Published - 2024

Keywords

CMOS
D-band
communication
gain boosting
low-noise amplifiers (LNAs)
mm-wave
radar

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10.1109/LSSC.2024.3455889

Cite this

@article{9d0e788a98174cdab6bad10ab010efb9,

title = "A D-Band 13-mW Dual-Mode CMOS LNA for Joint Radar-Communication in 22-nm FD-SOI CMOS",

abstract = "This letter presents a D-band low-noise amplifier (LNA) for joint radar-communication applications in 22-nm CMOS technology. The 4-stage LNA uses transistor switching and bias class changes to achieve dual-mode functionality. In the radar mode, the LNA achieves gain of 17 dB, noise figure (NF) of 7.7 dB, 3-dB bandwidth (BW) of 117-129 GHz, and IP1dB of-20 dBm, respectively. In the communication mode, the LNA achieves gain of 22.6 dB, NF of 8.5 dB, BW of 115.9-128.9 GHz, and IP1dB of-29 dBm, respectively. The power consumption for the radar and communication modes is 13 and 12.2 mW, respectively. The LNA has a core area of 0.06",

keywords = "CMOS, D-band, communication, gain boosting, low-noise amplifiers (LNAs), mm-wave, radar",

author = "Shankkar Balasubramanian and Kristof Vaesen and Anirudh Kankuppe and Sehoon Park and Carsten Wulff",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.",

year = "2024",

doi = "10.1109/LSSC.2024.3455889",

language = "English",

volume = "7",

pages = "259--262",

journal = "IEEE Solid-State Circuits Letters",

issn = "2573-9603",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - A D-Band 13-mW Dual-Mode CMOS LNA for Joint Radar-Communication in 22-nm FD-SOI CMOS

AU - Balasubramanian, Shankkar

AU - Vaesen, Kristof

AU - Kankuppe, Anirudh

AU - Park, Sehoon

AU - Wulff, Carsten

PY - 2024

Y1 - 2024

N2 - This letter presents a D-band low-noise amplifier (LNA) for joint radar-communication applications in 22-nm CMOS technology. The 4-stage LNA uses transistor switching and bias class changes to achieve dual-mode functionality. In the radar mode, the LNA achieves gain of 17 dB, noise figure (NF) of 7.7 dB, 3-dB bandwidth (BW) of 117-129 GHz, and IP1dB of-20 dBm, respectively. In the communication mode, the LNA achieves gain of 22.6 dB, NF of 8.5 dB, BW of 115.9-128.9 GHz, and IP1dB of-29 dBm, respectively. The power consumption for the radar and communication modes is 13 and 12.2 mW, respectively. The LNA has a core area of 0.06

AB - This letter presents a D-band low-noise amplifier (LNA) for joint radar-communication applications in 22-nm CMOS technology. The 4-stage LNA uses transistor switching and bias class changes to achieve dual-mode functionality. In the radar mode, the LNA achieves gain of 17 dB, noise figure (NF) of 7.7 dB, 3-dB bandwidth (BW) of 117-129 GHz, and IP1dB of-20 dBm, respectively. In the communication mode, the LNA achieves gain of 22.6 dB, NF of 8.5 dB, BW of 115.9-128.9 GHz, and IP1dB of-29 dBm, respectively. The power consumption for the radar and communication modes is 13 and 12.2 mW, respectively. The LNA has a core area of 0.06

KW - CMOS

KW - D-band

KW - communication

KW - gain boosting

KW - low-noise amplifiers (LNAs)

KW - mm-wave

KW - radar

UR - https://www.scopus.com/pages/publications/85204118750

U2 - 10.1109/LSSC.2024.3455889

DO - 10.1109/LSSC.2024.3455889

M3 - Article

AN - SCOPUS:85204118750

SN - 2573-9603

VL - 7

SP - 259

EP - 262

JO - IEEE Solid-State Circuits Letters

JF - IEEE Solid-State Circuits Letters

ER -

A D-Band 13-mW Dual-Mode CMOS LNA for Joint Radar-Communication in 22-nm FD-SOI CMOS

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Keywords

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