TY - JOUR
T1 - A D-Band 13-mW Dual-Mode CMOS LNA for Joint Radar-Communication in 22-nm FD-SOI CMOS
AU - Balasubramanian, Shankkar
AU - Vaesen, Kristof
AU - Kankuppe, Anirudh
AU - Park, Sehoon
AU - Wulff, Carsten
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2024
Y1 - 2024
N2 - This letter presents a D-band low-noise amplifier (LNA) for joint radar-communication applications in 22-nm CMOS technology. The 4-stage LNA uses transistor switching and bias class changes to achieve dual-mode functionality. In the radar mode, the LNA achieves gain of 17 dB, noise figure (NF) of 7.7 dB, 3-dB bandwidth (BW) of 117-129 GHz, and IP1dB of-20 dBm, respectively. In the communication mode, the LNA achieves gain of 22.6 dB, NF of 8.5 dB, BW of 115.9-128.9 GHz, and IP1dB of-29 dBm, respectively. The power consumption for the radar and communication modes is 13 and 12.2 mW, respectively. The LNA has a core area of 0.06
AB - This letter presents a D-band low-noise amplifier (LNA) for joint radar-communication applications in 22-nm CMOS technology. The 4-stage LNA uses transistor switching and bias class changes to achieve dual-mode functionality. In the radar mode, the LNA achieves gain of 17 dB, noise figure (NF) of 7.7 dB, 3-dB bandwidth (BW) of 117-129 GHz, and IP1dB of-20 dBm, respectively. In the communication mode, the LNA achieves gain of 22.6 dB, NF of 8.5 dB, BW of 115.9-128.9 GHz, and IP1dB of-29 dBm, respectively. The power consumption for the radar and communication modes is 13 and 12.2 mW, respectively. The LNA has a core area of 0.06
KW - CMOS
KW - D-band
KW - communication
KW - gain boosting
KW - low-noise amplifiers (LNAs)
KW - mm-wave
KW - radar
UR - https://www.scopus.com/pages/publications/85204118750
U2 - 10.1109/LSSC.2024.3455889
DO - 10.1109/LSSC.2024.3455889
M3 - Article
AN - SCOPUS:85204118750
SN - 2573-9603
VL - 7
SP - 259
EP - 262
JO - IEEE Solid-State Circuits Letters
JF - IEEE Solid-State Circuits Letters
ER -