@inproceedings{0290a580203b4f8aa687c5d032b65264,
title = "A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm Psatand 24.3 % PAE in a 250-nm InP HBT Technology",
abstract = "This paper presents a high-power high-efficiency stacked D-band power amplifier (PA) in a 250-nm HBT technology. The pseudo-differential PA is 2-way power-combined with a power combining network exhibiting a single-transformer footprint and a low loss by reflecting asymmetry leaking to the common mode. The presented PA has a saturated output power of 20.9 dBm and a peak power-added efficiency (PAE) of 24.3%. A small-signal gain of 14.2 dB is obtained with a 3-dB bandwidth of 19 GHz.",
keywords = "common-base, D-band, InP, millimeter-wave, power amplifier, stacked PA",
author = "Arno Hemelhof and Sehoon Park and Yang Zhang and Mark Ingels and Giuseppe Gramegna and Kristof Vaesen and Dongyang Yan and Piet Wambacq",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024 ; Conference date: 27-10-2024 Through 30-10-2024",
year = "2024",
doi = "10.1109/BCICTS59662.2024.10745714",
language = "English",
series = "2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "185--188",
booktitle = "2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024",
address = "United States",
}