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A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm Psatand 24.3 % PAE in a 250-nm InP HBT Technology

  • Arno Hemelhof
  • , Sehoon Park
  • , Yang Zhang
  • , Mark Ingels
  • , Giuseppe Gramegna
  • , Kristof Vaesen
  • , Dongyang Yan
  • , Piet Wambacq
  • Interuniversitair Micro-Elektronica Centrum
  • Vrije Universiteit Brussel

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

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