Abstract
We investigate the InAlAs/InGaAs metamorphic HEMT on GaAs substrate as a harmonic optoelectronic mixer. The fabricated metamorphic HEMT simultaneously performs photodetection at 1.55μm lightwave and harmonic optoelectronic up-conversion into millimeter-wave band. By changing the bias conditions of the HEMT, the harmonic optoelectronic mixing efficiency can be selectively enhanced while suppressing undesired mixing components. The metamorphic HEMT as a harmonic optoelectronic mixer is a promising candidate that can simplify the base station architecture in fiber-optic millimeter-wave transmission systems.
| Original language | English |
|---|---|
| Pages (from-to) | 1383-1386 |
| Number of pages | 4 |
| Journal | IEEE MTT-S International Microwave Symposium Digest |
| Volume | 2 |
| State | Published - 2003 |
| Event | 2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States Duration: 8 Jun 2003 → 13 Jun 2003 |