A new candidate for high performance transparent electronic circuits: Sol-gel based SnO 2/ZrO 2 thin film transistors

Jaewon Jang; Rungrot Kitsomboonloha; Vivek Subramanian

doi:10.1109/IEDM.2011.6131555

A new candidate for high performance transparent electronic circuits: Sol-gel based SnO ₂/ZrO ₂ thin film transistors

Jaewon Jang, Rungrot Kitsomboonloha, Vivek Subramanian

School of Electronics Engineering

University of California at Berkeley

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We have developed a novel solution-processed transparent thin film transistor technology based on sol-gel deposited SnO ₂ semiconductor and ZrO ₂ dielectric layers. The entire process is fully compatible with low-cost display glass substrates, and delivered unprecedented levels of performance. Devices with saturation mobility > 100 cm ²/Vs, Subthreshold swing of ∼0.3V/decade, and operating voltage <1.5 V were demonstrated. These record results represent a tremendous improvement in performance over the state of the art, and are an important step towards realizing low-cost, large area, high-performance systems on glass.

Original language	English
Title of host publication	2011 International Electron Devices Meeting, IEDM 2011
Pages	14.7.1-14.7.3
DOIs	https://doi.org/10.1109/IEDM.2011.6131555
State	Published - 2011
Event	2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States Duration: 5 Dec 2011 → 7 Dec 2011

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2011 IEEE International Electron Devices Meeting, IEDM 2011
Country/Territory	United States
City	Washington, DC
Period	5/12/11 → 7/12/11

Access to Document

10.1109/IEDM.2011.6131555

Cite this

Jang, J., Kitsomboonloha, R., & Subramanian, V. (2011). A new candidate for high performance transparent electronic circuits: Sol-gel based SnO ₂/ZrO ₂ thin film transistors. In 2011 International Electron Devices Meeting, IEDM 2011 (pp. 14.7.1-14.7.3). Article 6131555 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2011.6131555

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title = "A new candidate for high performance transparent electronic circuits: Sol-gel based SnO 2/ZrO 2 thin film transistors",

abstract = "We have developed a novel solution-processed transparent thin film transistor technology based on sol-gel deposited SnO 2 semiconductor and ZrO 2 dielectric layers. The entire process is fully compatible with low-cost display glass substrates, and delivered unprecedented levels of performance. Devices with saturation mobility > 100 cm 2/Vs, Subthreshold swing of ∼0.3V/decade, and operating voltage <1.5 V were demonstrated. These record results represent a tremendous improvement in performance over the state of the art, and are an important step towards realizing low-cost, large area, high-performance systems on glass.",

author = "Jaewon Jang and Rungrot Kitsomboonloha and Vivek Subramanian",

year = "2011",

doi = "10.1109/IEDM.2011.6131555",

language = "English",

isbn = "9781457705052",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "14.7.1--14.7.3",

booktitle = "2011 International Electron Devices Meeting, IEDM 2011",

note = "2011 IEEE International Electron Devices Meeting, IEDM 2011 ; Conference date: 05-12-2011 Through 07-12-2011",

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Jang, J, Kitsomboonloha, R & Subramanian, V 2011, A new candidate for high performance transparent electronic circuits: Sol-gel based SnO ₂/ZrO ₂ thin film transistors. in 2011 International Electron Devices Meeting, IEDM 2011., 6131555, Technical Digest - International Electron Devices Meeting, IEDM, pp. 14.7.1-14.7.3, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, DC, United States, 5/12/11. https://doi.org/10.1109/IEDM.2011.6131555

A new candidate for high performance transparent electronic circuits: Sol-gel based SnO ₂/ZrO ₂ thin film transistors. / Jang, Jaewon; Kitsomboonloha, Rungrot; Subramanian, Vivek.
2011 International Electron Devices Meeting, IEDM 2011. 2011. p. 14.7.1-14.7.3 6131555 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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