A New Methodology to Analyze Carrier Transport Properties for InxGa1-xAs Quantum-Well High-Electron Mobility Transistors From Transconductance in Saturation

Hyo Jin Kim, Ji Hoon Yoo, Wan Soo Park, Seung Won Yun, Hyeon Bhin Jo, In Geun Lee, Tae Woo Kim, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Jae Hak Lee, Dae Hyun Kim

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Conventional techniques to characterize the carrier transport properties in high-electron-mobility transistors do not account for the effect of each individual unit process and device integration, and can be challenging to use for short-channel devices. To overcome this, we have developed a new technique that consists of measurement and analysis of the transconductance scaling behavior. The proposed gm modeling technique yielded the effective mobility, μn-eff, and saturation velocity, vsat for fabricated InxGa1-x As Quantum-Well (QW) HEMTs, correlating the carrier transport properties to the device characteristics. This helps illuminate the physics of the carrier transport properties of HEMTs from the mobility relevant to the velocity saturation regimes.

Original languageEnglish
Pages (from-to)229-232
Number of pages4
JournalIEEE Electron Device Letters
Volume44
Issue number2
DOIs
StatePublished - 1 Feb 2023

Keywords

  • effective mobility
  • InGa-As and HEMT
  • saturation velocity
  • Transconductance

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