Abstract
Conventional techniques to characterize the carrier transport properties in high-electron-mobility transistors do not account for the effect of each individual unit process and device integration, and can be challenging to use for short-channel devices. To overcome this, we have developed a new technique that consists of measurement and analysis of the transconductance scaling behavior. The proposed gm modeling technique yielded the effective mobility, μn-eff, and saturation velocity, vsat for fabricated InxGa1-x As Quantum-Well (QW) HEMTs, correlating the carrier transport properties to the device characteristics. This helps illuminate the physics of the carrier transport properties of HEMTs from the mobility relevant to the velocity saturation regimes.
Original language | English |
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Pages (from-to) | 229-232 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 44 |
Issue number | 2 |
DOIs | |
State | Published - 1 Feb 2023 |
Keywords
- effective mobility
- InGa-As and HEMT
- saturation velocity
- Transconductance