A new non-quasi-static small signal model of SOI FinFETs

In Man Kang, Jong Duk Lee, Hyungcheol Shin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A new non-quasi-static small-signal model of FinFETs is presented using 3-D device simulator. The analytical parameter extractions are performed by Y-parameter analysis. Accuracy of the model and extraction method is verified with the device-simulation data up to 700 GHz. Without any complex fitting and optimization steps, the total modeling RMS error of Y-parameter up to 700 GHz was calculated to be only 1.6 % in the saturation region.

Original languageEnglish
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages314-315
Number of pages2
DOIs
StatePublished - 2006
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: 22 Oct 200625 Oct 2006

Publication series

Name2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume1

Conference

Conference2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Country/TerritoryKorea, Republic of
CityGyeongju
Period22/10/0625/10/06

Keywords

  • FinFET
  • Non-quasi-static model
  • RF MOSFET modeling

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