@inproceedings{92970d5f655b4b7486306dd6a1c695c7,
title = "A new non-quasi-static small signal model of SOI FinFETs",
abstract = "A new non-quasi-static small-signal model of FinFETs is presented using 3-D device simulator. The analytical parameter extractions are performed by Y-parameter analysis. Accuracy of the model and extraction method is verified with the device-simulation data up to 700 GHz. Without any complex fitting and optimization steps, the total modeling RMS error of Y-parameter up to 700 GHz was calculated to be only 1.6 % in the saturation region.",
keywords = "FinFET, Non-quasi-static model, RF MOSFET modeling",
author = "Kang, {In Man} and Lee, {Jong Duk} and Hyungcheol Shin",
year = "2006",
doi = "10.1109/NMDC.2006.4388744",
language = "English",
isbn = "1424405408",
series = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",
pages = "314--315",
booktitle = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",
note = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC ; Conference date: 22-10-2006 Through 25-10-2006",
}