A new two-step recess technology using SiNx passivation and Pt-buried gate process and its application to 0.15μm Al0.6InAs/ In0.65GaAs HEMTs

Dae Hyun Kim; Kang Min Lee; Jae Hak Lee; Kwang Seok Seo

doi:10.1109/DRC.2004.1367787

A new two-step recess technology using SiN_x passivation and Pt-buried gate process and its application to 0.15μm Al_0.6InAs/ In_0.65GaAs HEMTs

Dae Hyun Kim, Kang Min Lee, Jae Hak Lee, Kwang Seok Seo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A two-step recess (TSR) technology using SiN_x passivation and Pt-buried gate process and its application to 0.15μm Al_0.6InAs/ In_0,65GaAs HEMTs are discussed. In the process, R-PECVD grown SiN_x dielectric film acts as surface passivation instead of conventional InP etch-stopper and relatively more free carriers reside in the side-recessed region by shortening gate-to-channel distance through Pt-buried gate process. These are crucial to the minimization of the performance degradation related with side-recessed region. Remarkable improvements could be obtained such as the suppression of Kink effect, and the increase of DC transconductance.

Original language	English
Title of host publication	Device Research Conference - Conference Digest, 62nd DRC
Pages	69-70
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2004.1367787
State	Published - 2004
Event	Device Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States Duration: 21 Jun 2004 → 23 Jun 2004

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Conference

Conference	Device Research Conference - Conference Digest, 62nd DRC
Country/Territory	United States
City	Notre Dame, IN
Period	21/06/04 → 23/06/04

Access to Document

10.1109/DRC.2004.1367787

Cite this

Kim, D. H., Lee, K. M., Lee, J. H., & Seo, K. S. (2004). A new two-step recess technology using SiN_x passivation and Pt-buried gate process and its application to 0.15μm Al_0.6InAs/ In_0.65GaAs HEMTs. In Device Research Conference - Conference Digest, 62nd DRC (pp. 69-70). Article III.-9 (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2004.1367787

@inproceedings{04b9e253e4e94d64871d34336b6e83ee,

title = "A new two-step recess technology using SiNx passivation and Pt-buried gate process and its application to 0.15μm Al0.6InAs/ In0.65GaAs HEMTs",

abstract = "A two-step recess (TSR) technology using SiNx passivation and Pt-buried gate process and its application to 0.15μm Al0.6InAs/ In0,65GaAs HEMTs are discussed. In the process, R-PECVD grown SiNx dielectric film acts as surface passivation instead of conventional InP etch-stopper and relatively more free carriers reside in the side-recessed region by shortening gate-to-channel distance through Pt-buried gate process. These are crucial to the minimization of the performance degradation related with side-recessed region. Remarkable improvements could be obtained such as the suppression of Kink effect, and the increase of DC transconductance.",

author = "Kim, {Dae Hyun} and Lee, {Kang Min} and Lee, {Jae Hak} and Seo, {Kwang Seok}",

year = "2004",

doi = "10.1109/DRC.2004.1367787",

language = "English",

isbn = "0780382846",

series = "Device Research Conference - Conference Digest, DRC",

pages = "69--70",

booktitle = "Device Research Conference - Conference Digest, 62nd DRC",

note = "Device Research Conference - Conference Digest, 62nd DRC ; Conference date: 21-06-2004 Through 23-06-2004",

}

Kim, DH, Lee, KM, Lee, JH & Seo, KS 2004, A new two-step recess technology using SiN_x passivation and Pt-buried gate process and its application to 0.15μm Al_0.6InAs/ In_0.65GaAs HEMTs. in Device Research Conference - Conference Digest, 62nd DRC., III.-9, Device Research Conference - Conference Digest, DRC, pp. 69-70, Device Research Conference - Conference Digest, 62nd DRC, Notre Dame, IN, United States, 21/06/04. https://doi.org/10.1109/DRC.2004.1367787

A new two-step recess technology using SiN_x passivation and Pt-buried gate process and its application to 0.15μm Al_0.6InAs/ In_0.65GaAs HEMTs. / Kim, Dae Hyun; Lee, Kang Min; Lee, Jae Hak et al.
Device Research Conference - Conference Digest, 62nd DRC. 2004. p. 69-70 III.-9 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - A two-step recess (TSR) technology using SiNx passivation and Pt-buried gate process and its application to 0.15μm Al0.6InAs/ In0,65GaAs HEMTs are discussed. In the process, R-PECVD grown SiNx dielectric film acts as surface passivation instead of conventional InP etch-stopper and relatively more free carriers reside in the side-recessed region by shortening gate-to-channel distance through Pt-buried gate process. These are crucial to the minimization of the performance degradation related with side-recessed region. Remarkable improvements could be obtained such as the suppression of Kink effect, and the increase of DC transconductance.

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