A New Unified Mobility Extraction Technique of In0.7Ga0.3As QW MOSFETs

Jung Ho Park; Do Kywn Kim; Seung Woo Son; Seung Heon Shin; Tae Woo Kim; Jung Hee Lee; Dae Hyun Kim

doi:10.1109/LED.2016.2589282

A New Unified Mobility Extraction Technique of In_0.7Ga_0.3As QW MOSFETs

Jung Ho Park, Do Kywn Kim, Seung Woo Son, Seung Heon Shin, Tae Woo Kim, Jung Hee Lee, Dae Hyun Kim

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Conventional methods to extract an effective mobility (μ_eff) in a metal-oxide-semiconductor field-effect-transistor (MOSFET) tend to ignore the portions of parasitic components of the device. This can cause a substantial error in the extracted value of the effective mobility. In this letter, we have proposed a unified procedure that enables to accurately capture each portion of parasitic series resistance (R_SD) and parasitic gate capacitance (C_g-par) components. Then, we have investigated the impact of the parasitic components on the extracted value of the effective mobility in a gate-last surface-channel In_0.7Ga_0.3As quantum-well MOSFET. We have found that the extracted effective mobility using our method turns out to be independent upon gate length (L_g) from 10 to 4μm, which verifies the accuracy of the approach proposed in this letter.

Original language	English
Article number	7508415
Pages (from-to)	1096-1099
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	9
DOIs	https://doi.org/10.1109/LED.2016.2589282
State	Published - Sep 2016

Keywords

De-Embedding
effective mobility (μ)
InGaAs MOSFET
parasitic capacitance
parasitic resistance

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10.1109/LED.2016.2589282

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title = "A New Unified Mobility Extraction Technique of In0.7Ga0.3As QW MOSFETs",

abstract = "Conventional methods to extract an effective mobility (μeff) in a metal-oxide-semiconductor field-effect-transistor (MOSFET) tend to ignore the portions of parasitic components of the device. This can cause a substantial error in the extracted value of the effective mobility. In this letter, we have proposed a unified procedure that enables to accurately capture each portion of parasitic series resistance (RSD) and parasitic gate capacitance (Cg-par) components. Then, we have investigated the impact of the parasitic components on the extracted value of the effective mobility in a gate-last surface-channel In0.7Ga0.3As quantum-well MOSFET. We have found that the extracted effective mobility using our method turns out to be independent upon gate length (Lg) from 10 to 4μm, which verifies the accuracy of the approach proposed in this letter.",

keywords = "De-Embedding, effective mobility (μ), InGaAs MOSFET, parasitic capacitance, parasitic resistance",

author = "Park, {Jung Ho} and Kim, {Do Kywn} and Son, {Seung Woo} and Shin, {Seung Heon} and Kim, {Tae Woo} and Lee, {Jung Hee} and Kim, {Dae Hyun}",

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AU - Park, Jung Ho

AU - Kim, Do Kywn

AU - Son, Seung Woo

AU - Shin, Seung Heon

AU - Kim, Tae Woo

AU - Lee, Jung Hee

AU - Kim, Dae Hyun

PY - 2016/9

Y1 - 2016/9

N2 - Conventional methods to extract an effective mobility (μeff) in a metal-oxide-semiconductor field-effect-transistor (MOSFET) tend to ignore the portions of parasitic components of the device. This can cause a substantial error in the extracted value of the effective mobility. In this letter, we have proposed a unified procedure that enables to accurately capture each portion of parasitic series resistance (RSD) and parasitic gate capacitance (Cg-par) components. Then, we have investigated the impact of the parasitic components on the extracted value of the effective mobility in a gate-last surface-channel In0.7Ga0.3As quantum-well MOSFET. We have found that the extracted effective mobility using our method turns out to be independent upon gate length (Lg) from 10 to 4μm, which verifies the accuracy of the approach proposed in this letter.

AB - Conventional methods to extract an effective mobility (μeff) in a metal-oxide-semiconductor field-effect-transistor (MOSFET) tend to ignore the portions of parasitic components of the device. This can cause a substantial error in the extracted value of the effective mobility. In this letter, we have proposed a unified procedure that enables to accurately capture each portion of parasitic series resistance (RSD) and parasitic gate capacitance (Cg-par) components. Then, we have investigated the impact of the parasitic components on the extracted value of the effective mobility in a gate-last surface-channel In0.7Ga0.3As quantum-well MOSFET. We have found that the extracted effective mobility using our method turns out to be independent upon gate length (Lg) from 10 to 4μm, which verifies the accuracy of the approach proposed in this letter.

KW - De-Embedding

KW - effective mobility (μ)

KW - InGaAs MOSFET

KW - parasitic capacitance

KW - parasitic resistance

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JF - IEEE Electron Device Letters

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ER -

A New Unified Mobility Extraction Technique of In_0.7Ga_0.3As QW MOSFETs

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Keywords

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