A nitrogen-treated memristive device for tunable electronic synapses

Sangsu Park; Manzar Siddik; Jinwoo Noh; Daeseuk Lee; Kibong Moon; Jiyong Woo; Byoung Hun Lee; Hyunsang Hwang

doi:10.1088/0268-1242/29/10/104006

A nitrogen-treated memristive device for tunable electronic synapses

Sangsu Park
, Manzar Siddik
, Jinwoo Noh
, Daeseuk Lee
, Kibong Moon
, Jiyong Woo
, Byoung Hun Lee
, Hyunsang Hwang

School of Electronics Engineering

Gwangju Institute of Science and Technology
Pohang University of Science and Technology

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We propose a redox-based tunable memristive device for neuromorphic applications. First, we report the implementation of a 150 nm Pt/TiNx/Pr0.7Ca0.3MnO3(PCMO)/Pt memristive device with multi-level storage capability for use as an electronic synapse. In addition, we investigate the tunable memristive characteristics on Schottky barrier modulation. The Schottky barrier was formed by the interface between a TiNx electrode and a p-type PCMO. By changing the nitrogen gas flow during the reactive sputter deposition of the TiNx electrode, we have successfully engineered the Schottky barrier height, resulting in the modulation of the current and demonstrating the feasibility of tunable electronic synapses.

Original language	English
Article number	104006
Journal	Semiconductor Science and Technology
Volume	29
Issue number	10
DOIs	https://doi.org/10.1088/0268-1242/29/10/104006
State	Published - 1 Oct 2014

Keywords

memristive device
neuromorphic device
resistive device

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10.1088/0268-1242/29/10/104006

Cite this

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title = "A nitrogen-treated memristive device for tunable electronic synapses",

abstract = "We propose a redox-based tunable memristive device for neuromorphic applications. First, we report the implementation of a 150 nm Pt/TiNx/Pr0.7Ca0.3MnO3(PCMO)/Pt memristive device with multi-level storage capability for use as an electronic synapse. In addition, we investigate the tunable memristive characteristics on Schottky barrier modulation. The Schottky barrier was formed by the interface between a TiNx electrode and a p-type PCMO. By changing the nitrogen gas flow during the reactive sputter deposition of the TiNx electrode, we have successfully engineered the Schottky barrier height, resulting in the modulation of the current and demonstrating the feasibility of tunable electronic synapses.",

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AU - Park, Sangsu

AU - Siddik, Manzar

AU - Noh, Jinwoo

AU - Lee, Daeseuk

AU - Moon, Kibong

AU - Woo, Jiyong

AU - Lee, Byoung Hun

AU - Hwang, Hyunsang

PY - 2014/10/1

Y1 - 2014/10/1

N2 - We propose a redox-based tunable memristive device for neuromorphic applications. First, we report the implementation of a 150 nm Pt/TiNx/Pr0.7Ca0.3MnO3(PCMO)/Pt memristive device with multi-level storage capability for use as an electronic synapse. In addition, we investigate the tunable memristive characteristics on Schottky barrier modulation. The Schottky barrier was formed by the interface between a TiNx electrode and a p-type PCMO. By changing the nitrogen gas flow during the reactive sputter deposition of the TiNx electrode, we have successfully engineered the Schottky barrier height, resulting in the modulation of the current and demonstrating the feasibility of tunable electronic synapses.

AB - We propose a redox-based tunable memristive device for neuromorphic applications. First, we report the implementation of a 150 nm Pt/TiNx/Pr0.7Ca0.3MnO3(PCMO)/Pt memristive device with multi-level storage capability for use as an electronic synapse. In addition, we investigate the tunable memristive characteristics on Schottky barrier modulation. The Schottky barrier was formed by the interface between a TiNx electrode and a p-type PCMO. By changing the nitrogen gas flow during the reactive sputter deposition of the TiNx electrode, we have successfully engineered the Schottky barrier height, resulting in the modulation of the current and demonstrating the feasibility of tunable electronic synapses.

KW - memristive device

KW - neuromorphic device

KW - resistive device

UR - https://www.scopus.com/pages/publications/84907193005

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DO - 10.1088/0268-1242/29/10/104006

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VL - 29

JO - Semiconductor Science and Technology

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IS - 10

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ER -

A nitrogen-treated memristive device for tunable electronic synapses

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Keywords

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