A normally off GaN n-MOSFET with Schottky-barrier source and drain on a Si-auto-doped p-GaN/Si

Heon Bok Lee; Hyun Ick Cho; Hyun Su An; Young Ho Bae; Myoung Bok Lee; Jung Hee Lee; Sung Ho Hahm

doi:10.1109/LED.2005.862675

A normally off GaN n-MOSFET with Schottky-barrier source and drain on a Si-auto-doped p-GaN/Si

Heon Bok Lee
, Hyun Ick Cho
, Hyun Su An
, Young Ho Bae
, Myoung Bok Lee
, Jung Hee Lee
, Sung Ho Hahm

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

56 Scopus citations

Abstract

We have fabricated an enhancement-mode n-channel Schottky-barrier-MOSFET(SB-MOSFET) for the first time on a high mobility p-type GaN film grown on silicon substrate. The metal contacts were formed by depositing Al for source/drain contact and Au for gate contact, respectively. Fabricated SB-MOSFET exhibited a threshold voltage of 1.65 V, and a maximum transconductance (g_m) of 1.6 mS/mm at V_DS = 5 V, which belongs to one of the highest value in GaN MOSFET. The maximum drain current was higher than 3 mA/mm and the off-state drain current was as low as 3 nA/mm.

Original language	English
Pages (from-to)	81-83
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	27
Issue number	2
DOIs	https://doi.org/10.1109/LED.2005.862675
State	Published - Feb 2006

Keywords

GaN
MOSFET
Schottky barrier (SB)

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10.1109/LED.2005.862675

Cite this

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title = "A normally off GaN n-MOSFET with Schottky-barrier source and drain on a Si-auto-doped p-GaN/Si",

abstract = "We have fabricated an enhancement-mode n-channel Schottky-barrier-MOSFET(SB-MOSFET) for the first time on a high mobility p-type GaN film grown on silicon substrate. The metal contacts were formed by depositing Al for source/drain contact and Au for gate contact, respectively. Fabricated SB-MOSFET exhibited a threshold voltage of 1.65 V, and a maximum transconductance (gm) of 1.6 mS/mm at VDS = 5 V, which belongs to one of the highest value in GaN MOSFET. The maximum drain current was higher than 3 mA/mm and the off-state drain current was as low as 3 nA/mm.",

keywords = "GaN, MOSFET, Schottky barrier (SB)",

author = "Lee, \{Heon Bok\} and Cho, \{Hyun Ick\} and An, \{Hyun Su\} and Bae, \{Young Ho\} and Lee, \{Myoung Bok\} and Lee, \{Jung Hee\} and Hahm, \{Sung Ho\}",

year = "2006",

month = feb,

doi = "10.1109/LED.2005.862675",

language = "English",

volume = "27",

pages = "81--83",

journal = "IEEE Electron Device Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - A normally off GaN n-MOSFET with Schottky-barrier source and drain on a Si-auto-doped p-GaN/Si

AU - Lee, Heon Bok

AU - Cho, Hyun Ick

AU - An, Hyun Su

AU - Bae, Young Ho

AU - Lee, Myoung Bok

AU - Lee, Jung Hee

AU - Hahm, Sung Ho

PY - 2006/2

Y1 - 2006/2

N2 - We have fabricated an enhancement-mode n-channel Schottky-barrier-MOSFET(SB-MOSFET) for the first time on a high mobility p-type GaN film grown on silicon substrate. The metal contacts were formed by depositing Al for source/drain contact and Au for gate contact, respectively. Fabricated SB-MOSFET exhibited a threshold voltage of 1.65 V, and a maximum transconductance (gm) of 1.6 mS/mm at VDS = 5 V, which belongs to one of the highest value in GaN MOSFET. The maximum drain current was higher than 3 mA/mm and the off-state drain current was as low as 3 nA/mm.

AB - We have fabricated an enhancement-mode n-channel Schottky-barrier-MOSFET(SB-MOSFET) for the first time on a high mobility p-type GaN film grown on silicon substrate. The metal contacts were formed by depositing Al for source/drain contact and Au for gate contact, respectively. Fabricated SB-MOSFET exhibited a threshold voltage of 1.65 V, and a maximum transconductance (gm) of 1.6 mS/mm at VDS = 5 V, which belongs to one of the highest value in GaN MOSFET. The maximum drain current was higher than 3 mA/mm and the off-state drain current was as low as 3 nA/mm.

KW - GaN

KW - MOSFET

KW - Schottky barrier (SB)

UR - https://www.scopus.com/pages/publications/31544442977

U2 - 10.1109/LED.2005.862675

DO - 10.1109/LED.2005.862675

M3 - Article

AN - SCOPUS:31544442977

SN - 0741-3106

VL - 27

SP - 81

EP - 83

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

ER -

A normally off GaN n-MOSFET with Schottky-barrier source and drain on a Si-auto-doped p-GaN/Si

Abstract

Keywords

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