Abstract
The spontaneous formation of electronic orders is a crucial element for understanding complex quantum states and engineering heterostructures in 2D materials. A novel (Formula presented.) × (Formula presented.) charge order in few-layer-thick 1T-TaTe2 transition metal dichalcogenide films grown by molecular beam epitaxy, which has not been realized, is report. The photoemission and scanning probe measurements demonstrate that monolayer 1T-TaTe2 exhibits a variety of metastable charge density wave orders, including the (Formula presented.) × (Formula presented.) superstructure, which can be selectively stabilized by controlling the post-growth annealing temperature. Moreover, it is found that only the (Formula presented.) × (Formula presented.) order persists in 1T-TaTe2 films thicker than a monolayer, up to 8 layers. The findings identify the previously unrealized novel electronic order in a much-studied transition metal dichalcogenide and provide a viable route to control it within the epitaxial growth process.
| Original language | English |
|---|---|
| Article number | 2204579 |
| Journal | Advanced Materials |
| Volume | 34 |
| Issue number | 38 |
| DOIs | |
| State | Published - 22 Sep 2022 |
Keywords
- angle-resolved photoemission
- charge density waves
- molecular beam epitaxy
- tantalum ditellurides
- transition metal dichalcogenides
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