A Novel Analysis of Lgd Dependent-1/f Noise in In0.08Al0.92N/GaN

Jae Hwa Seo, Young Jun Yoon, Dong Hyeok Son, Jeong Gil Kim, Jong Ho Lee, Jung Hee Lee, Ki Sik Im, In Man Kang

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


In0.08Al0.92N/GaN fin-type high-electron mobility transistors (fin-HEMTs) with different gate-to-drain lengths (Lgd) are fabricated and characterized by dc and low-frequency noise (LFN) measurements. The fabricated device with the largest Lgd exhibits the degradation of the maximum drain current and transconductance with a positive shift of the threshold voltage. LFN measurements of the In0.08Al0.92N/GaN fin-HEMTs reveal clear 1/f behavior of the noise spectra, and the minimum value is observed in the device at Lgd = 20 μ m. The devices with smaller Lgd follow a carrier number fluctuation noise model owing to electron trapping/detrapping into the In0.08Al0.92N barrier layer from the 2-D electron gas (2DEG) channel. In contrast, the device with the largest Lgd shows correlated mobility fluctuations due to the large 2DEG mobility fluctuations in the large access area.

Original languageEnglish
Article number8438534
Pages (from-to)1552-1555
Number of pages4
JournalIEEE Electron Device Letters
Issue number10
StatePublished - Oct 2018


  • carrier number fluctuation (CNF)
  • correlated mobility fluctuation (CMF)
  • finFET
  • high-electron mobility transistor(HEMT)
  • InAlN/GaN
  • low-frequency noise


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