Abstract
In0.08Al0.92N/GaN fin-type high-electron mobility transistors (fin-HEMTs) with different gate-to-drain lengths (Lgd) are fabricated and characterized by dc and low-frequency noise (LFN) measurements. The fabricated device with the largest Lgd exhibits the degradation of the maximum drain current and transconductance with a positive shift of the threshold voltage. LFN measurements of the In0.08Al0.92N/GaN fin-HEMTs reveal clear 1/f behavior of the noise spectra, and the minimum value is observed in the device at Lgd = 20 μ m. The devices with smaller Lgd follow a carrier number fluctuation noise model owing to electron trapping/detrapping into the In0.08Al0.92N barrier layer from the 2-D electron gas (2DEG) channel. In contrast, the device with the largest Lgd shows correlated mobility fluctuations due to the large 2DEG mobility fluctuations in the large access area.
Original language | English |
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Article number | 8438534 |
Pages (from-to) | 1552-1555 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 39 |
Issue number | 10 |
DOIs | |
State | Published - Oct 2018 |
Keywords
- carrier number fluctuation (CNF)
- correlated mobility fluctuation (CMF)
- finFET
- high-electron mobility transistor(HEMT)
- InAlN/GaN
- low-frequency noise