A Novel Analysis of Lgd Dependent-1/f Noise in In0.08Al0.92N/GaN

Jae Hwa Seo; Young Jun Yoon; Dong Hyeok Son; Jeong Gil Kim; Jong Ho Lee; Jung Hee Lee; Ki Sik Im; In Man Kang

doi:10.1109/LED.2018.2865564

A Novel Analysis of L_gd Dependent-1/f Noise in In_0.08Al_0.92N/GaN

Jae Hwa Seo
, Young Jun Yoon
, Dong Hyeok Son
, Jeong Gil Kim
, Jong Ho Lee
, Jung Hee Lee
, Ki Sik Im
, In Man Kang

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In_0.08Al_0.92N/GaN fin-type high-electron mobility transistors (fin-HEMTs) with different gate-to-drain lengths (L_gd) are fabricated and characterized by dc and low-frequency noise (LFN) measurements. The fabricated device with the largest L_gd exhibits the degradation of the maximum drain current and transconductance with a positive shift of the threshold voltage. LFN measurements of the In_0.08Al_0.92N/GaN fin-HEMTs reveal clear 1/f behavior of the noise spectra, and the minimum value is observed in the device at L_gd = 20 μ m. The devices with smaller L_gd follow a carrier number fluctuation noise model owing to electron trapping/detrapping into the In_0.08Al_0.92N barrier layer from the 2-D electron gas (2DEG) channel. In contrast, the device with the largest L_gd shows correlated mobility fluctuations due to the large 2DEG mobility fluctuations in the large access area.

Original language	English
Article number	8438534
Pages (from-to)	1552-1555
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	10
DOIs	https://doi.org/10.1109/LED.2018.2865564
State	Published - Oct 2018

Keywords

carrier number fluctuation (CNF)
correlated mobility fluctuation (CMF)
finFET
high-electron mobility transistor(HEMT)
InAlN/GaN
low-frequency noise

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10.1109/LED.2018.2865564

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@article{743c308d2676479ba8e91c55b8055040,

title = "A Novel Analysis of Lgd Dependent-1/f Noise in In0.08Al0.92N/GaN",

abstract = "In0.08Al0.92N/GaN fin-type high-electron mobility transistors (fin-HEMTs) with different gate-to-drain lengths (Lgd) are fabricated and characterized by dc and low-frequency noise (LFN) measurements. The fabricated device with the largest Lgd exhibits the degradation of the maximum drain current and transconductance with a positive shift of the threshold voltage. LFN measurements of the In0.08Al0.92N/GaN fin-HEMTs reveal clear 1/f behavior of the noise spectra, and the minimum value is observed in the device at Lgd = 20 μ m. The devices with smaller Lgd follow a carrier number fluctuation noise model owing to electron trapping/detrapping into the In0.08Al0.92N barrier layer from the 2-D electron gas (2DEG) channel. In contrast, the device with the largest Lgd shows correlated mobility fluctuations due to the large 2DEG mobility fluctuations in the large access area.",

keywords = "carrier number fluctuation (CNF), correlated mobility fluctuation (CMF), finFET, high-electron mobility transistor(HEMT), InAlN/GaN, low-frequency noise",

author = "Seo, \{Jae Hwa\} and Yoon, \{Young Jun\} and Son, \{Dong Hyeok\} and Kim, \{Jeong Gil\} and Lee, \{Jong Ho\} and Lee, \{Jung Hee\} and Im, \{Ki Sik\} and Kang, \{In Man\}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2018",

month = oct,

doi = "10.1109/LED.2018.2865564",

language = "English",

volume = "39",

pages = "1552--1555",

journal = "IEEE Electron Device Letters",

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AU - Seo, Jae Hwa

AU - Yoon, Young Jun

AU - Son, Dong Hyeok

AU - Kim, Jeong Gil

AU - Lee, Jong Ho

AU - Lee, Jung Hee

AU - Im, Ki Sik

AU - Kang, In Man

PY - 2018/10

Y1 - 2018/10

N2 - In0.08Al0.92N/GaN fin-type high-electron mobility transistors (fin-HEMTs) with different gate-to-drain lengths (Lgd) are fabricated and characterized by dc and low-frequency noise (LFN) measurements. The fabricated device with the largest Lgd exhibits the degradation of the maximum drain current and transconductance with a positive shift of the threshold voltage. LFN measurements of the In0.08Al0.92N/GaN fin-HEMTs reveal clear 1/f behavior of the noise spectra, and the minimum value is observed in the device at Lgd = 20 μ m. The devices with smaller Lgd follow a carrier number fluctuation noise model owing to electron trapping/detrapping into the In0.08Al0.92N barrier layer from the 2-D electron gas (2DEG) channel. In contrast, the device with the largest Lgd shows correlated mobility fluctuations due to the large 2DEG mobility fluctuations in the large access area.

AB - In0.08Al0.92N/GaN fin-type high-electron mobility transistors (fin-HEMTs) with different gate-to-drain lengths (Lgd) are fabricated and characterized by dc and low-frequency noise (LFN) measurements. The fabricated device with the largest Lgd exhibits the degradation of the maximum drain current and transconductance with a positive shift of the threshold voltage. LFN measurements of the In0.08Al0.92N/GaN fin-HEMTs reveal clear 1/f behavior of the noise spectra, and the minimum value is observed in the device at Lgd = 20 μ m. The devices with smaller Lgd follow a carrier number fluctuation noise model owing to electron trapping/detrapping into the In0.08Al0.92N barrier layer from the 2-D electron gas (2DEG) channel. In contrast, the device with the largest Lgd shows correlated mobility fluctuations due to the large 2DEG mobility fluctuations in the large access area.

KW - carrier number fluctuation (CNF)

KW - correlated mobility fluctuation (CMF)

KW - finFET

KW - high-electron mobility transistor(HEMT)

KW - InAlN/GaN

KW - low-frequency noise

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DO - 10.1109/LED.2018.2865564

M3 - Article

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SN - 0741-3106

VL - 39

SP - 1552

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

M1 - 8438534

ER -

A Novel Analysis of L_gd Dependent-1/f Noise in In_0.08Al_0.92N/GaN

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