A Physical LDMOST Model and Predictive Simulations for Advanced Technology CAD

Yeonbae Chung

doi:10.14445/23488379/IJEEE-V12I2P105

A Physical LDMOST Model and Predictive Simulations for Advanced Technology CAD

Yeonbae Chung

Research output: Contribution to journal › Article › peer-review

Abstract

This article describes a compact Lateral DMOS Transistor (LDMOST) model incorporated directly into SPICE source code and presents its application to power IC technology CAD. The complete model combines a previously developed semi-numerical static model and a built-in parasitic component model with a charge-based dynamic model. This composite model is based on device physics; thus, it accounts well for important power MOSFET characteristics such as non-uniformly doped channels, reverse-recovery transients and the non-planar drift region. The measurements from the power MOSFET samples support the predictive model, verified in extensive SPICE simulations of several high-voltage circuits. This LDMOST model might be useful in computer-aided optimal design of smart power ICs.

Original language	English
Pages (from-to)	39-47
Number of pages	9
Journal	SSRG International Journal of Electrical and Electronics Engineering
Volume	12
Issue number	2
DOIs	https://doi.org/10.14445/23488379/IJEEE-V12I2P105
State	Published - Feb 2025

Keywords

Charge-based dynamic model
High-voltage MOSFET
Lateral DMOS transistor
Parasitic BJT model
Power IC technology CAD

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10.14445/23488379/IJEEE-V12I2P105

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title = "A Physical LDMOST Model and Predictive Simulations for Advanced Technology CAD",

abstract = "This article describes a compact Lateral DMOS Transistor (LDMOST) model incorporated directly into SPICE source code and presents its application to power IC technology CAD. The complete model combines a previously developed semi-numerical static model and a built-in parasitic component model with a charge-based dynamic model. This composite model is based on device physics; thus, it accounts well for important power MOSFET characteristics such as non-uniformly doped channels, reverse-recovery transients and the non-planar drift region. The measurements from the power MOSFET samples support the predictive model, verified in extensive SPICE simulations of several high-voltage circuits. This LDMOST model might be useful in computer-aided optimal design of smart power ICs.",

keywords = "Charge-based dynamic model, High-voltage MOSFET, Lateral DMOS transistor, Parasitic BJT model, Power IC technology CAD",

author = "Yeonbae Chung",

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year = "2025",

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doi = "10.14445/23488379/IJEEE-V12I2P105",

language = "English",

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T1 - A Physical LDMOST Model and Predictive Simulations for Advanced Technology CAD

AU - Chung, Yeonbae

PY - 2025/2

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N2 - This article describes a compact Lateral DMOS Transistor (LDMOST) model incorporated directly into SPICE source code and presents its application to power IC technology CAD. The complete model combines a previously developed semi-numerical static model and a built-in parasitic component model with a charge-based dynamic model. This composite model is based on device physics; thus, it accounts well for important power MOSFET characteristics such as non-uniformly doped channels, reverse-recovery transients and the non-planar drift region. The measurements from the power MOSFET samples support the predictive model, verified in extensive SPICE simulations of several high-voltage circuits. This LDMOST model might be useful in computer-aided optimal design of smart power ICs.

AB - This article describes a compact Lateral DMOS Transistor (LDMOST) model incorporated directly into SPICE source code and presents its application to power IC technology CAD. The complete model combines a previously developed semi-numerical static model and a built-in parasitic component model with a charge-based dynamic model. This composite model is based on device physics; thus, it accounts well for important power MOSFET characteristics such as non-uniformly doped channels, reverse-recovery transients and the non-planar drift region. The measurements from the power MOSFET samples support the predictive model, verified in extensive SPICE simulations of several high-voltage circuits. This LDMOST model might be useful in computer-aided optimal design of smart power ICs.

KW - Charge-based dynamic model

KW - High-voltage MOSFET

KW - Lateral DMOS transistor

KW - Parasitic BJT model

KW - Power IC technology CAD

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DO - 10.14445/23488379/IJEEE-V12I2P105

M3 - Article

AN - SCOPUS:85218725862

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EP - 47

JO - SSRG International Journal of Electrical and Electronics Engineering

JF - SSRG International Journal of Electrical and Electronics Engineering

IS - 2

ER -

A Physical LDMOST Model and Predictive Simulations for Advanced Technology CAD

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